2012
DOI: 10.1016/j.ceramint.2011.12.069
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Dielectric properties and electrical behaviors of tunable Bi1.5MgNb1.5O7 thin films

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Cited by 25 publications
(15 citation statements)
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“…These values are superior to that of bulk BMN ceramics and thin film with random orientations in Refs. [5,6,11]. It has demonstrated that the polarizability in bismuth based cubic pyrochlore is mainly contributed by the O′-A-O′ bends, which are oriented along the 〈111〉 direction, and the (222) preferred orientation could be a positive factor to the dielectric constant [12].…”
Section: Resultsmentioning
confidence: 97%
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“…These values are superior to that of bulk BMN ceramics and thin film with random orientations in Refs. [5,6,11]. It has demonstrated that the polarizability in bismuth based cubic pyrochlore is mainly contributed by the O′-A-O′ bends, which are oriented along the 〈111〉 direction, and the (222) preferred orientation could be a positive factor to the dielectric constant [12].…”
Section: Resultsmentioning
confidence: 97%
“…high dielectric constant, low loss, large dielectric nonlinearity [4,5]. To utilize the prominent characteristics of BMN in thin film devices, a lot of attempts have been made to produce BMN thin films [4][5][6][7]. Furthermore, previous works have demonstrated that the (222)-oriented BMN thin films have superior dielectric properties compared with the randomly oriented ones [6,7].…”
Section: Introductionmentioning
confidence: 97%
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“…Up to now, a number of works on BMN thin films deposited on various substrates including ITO/glass, Si, and sapphire have been conducted [6][7][8][9][10]. However, most attentions were paid to the influences of deposition conditions on the properties of BMN thin films rather than to the substrate selection.…”
Section: Introductionmentioning
confidence: 97%
“…Bi 1.5 Mg 1.0 Nb 1.5 O 7 (BMN) thin films as the typical candidate are of recent special interest due to their relatively large tunability combine with very low dielectric loss [6][7][8]. Additionally, the BMN thin films exhibit an enhanced dielectric nonlinearity, which make the fabrication and operation of devices easily [6,9].…”
Section: Introductionmentioning
confidence: 99%