Dielectric relaxations and phase-transition-like behavior in SmAlO3 ceramics at high temperatures

Lei, Changmei; Wang, Chunchang; Li, Teng; Wang, Guojing; Sun, Xiaohong; Liu, Lina; Wang, Jing

doi:10.1007/s10853-013-7549-5

Cited by 11 publications

(7 citation statements)

References 26 publications

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“…The activation energies are about 0.88 eV for x = 0.06, 0.89 eV for x = 0.1, and 0.86 eV for x = 0.2, respectively. The closet match to these energy activation values is oxygen vacancies . It is very common that oxygen vacancies can be easily induced during sintering process for polycrystalline ceramics.…”

Section: Resultsmentioning

confidence: 52%

“…T max , where the dielectric loss peak values occur, increases with the increasing frequency. These anomalies of dielectric constant and dielectric loss indicate that the 0.94MT‐0.06CST samples manifest a significant temperature‐dependent dielectric relaxation . It is very interesting to note that significant dielectric relaxations can be detected from all the MT‐CST ceramics when x varies from 0.04 to 0.2.…”

Section: Resultsmentioning

confidence: 91%

“…Moreover, for each composition, T max shifts to higher temperature as testing frequency increases. According to the pertinent literatures, the activation energies can be determined from Arrhenius equations, and the results are shown in Fig. .…”

Section: Resultsmentioning

confidence: 99%

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Microwave Dielectric Properties and Thermally Stimulated Depolarization Currents of (1 − x)MgTiO₃–xCa_0.8Sr_0.2TiO₃ Ceramics

et al. 2015

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1 -x)MgTiO 3 -xCa 0.8 Sr 0.2 TiO 3 (0.04 ≤ x ≤ 0.2, MT-CST) composite ceramics were prepared by the conventional solidstate reaction process. The phase composition, microwave dielectric properties, and microwave dielectric loss mechanisms were studied. Ca 0.8 Sr 0.2 TiO 3 was employed as a s f compensator for MgTiO 3 , and they coexisted well without forming any secondary phases. Interestingly, significant dielectric relaxations associated with oxygen vacancy defects were observed in all the MT-CST ceramics through the dielectric-temperature spectra. Thermally simulated depolarization current was therefore conducted to obtain the defects associated with extrinsic dielectric loss mechanisms. The concentrations of both defect dipole ½ðTi 0 Ti Þ À ðV O Þ and in-grain oxygen vacancies ðV O Þ increased with the increasing x, which could induce microwave dielectric loss consequently. It demonstrated that the behaviors of Q 3 f were basically influenced by phase composition and defects here. Temperature-stable ceramics can be achieved at x = 0.06, where the microwave dielectric properties were e r = 21.19, Q 3 f = 110 900 GHz (f = 9.295 GHz), and s f = -0.9 ppm/°C, respectively. P. Davies-contributing editorManuscript No. 35752.

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Section: Resultsmentioning

confidence: 52%

Section: Resultsmentioning

confidence: 91%

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Microwave Dielectric Properties and Thermally Stimulated Depolarization Currents of (1 − x)MgTiO₃–xCa_0.8Sr_0.2TiO₃ Ceramics

et al. 2015

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“…The mobility of the space charge became easier with the increasing temperature, the accumulated charge carriers in the vicinity of phase boundaries had sufficient energy to pass through the barrier, leading to an enhanced conductivity with the reduction in impedance [18]. The Nyquist plot showed a tail at lower frequencies, indicating the contact effect come into action, the similar phenomenon is also observed in SmAlO 3 ceramics [38]. …”

Section: Resultsmentioning

confidence: 96%

High Energy Storage Density and Impedance Response of PLZT2/95/5 Antiferroelectric Ceramics

Liu

Tang

et al. 2017

Materials

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(Pb 0.97 La 0.02 )(Zr 0.95 Ti 0.05 )O 3 (PLZT2/95/5) ceramics were successfully prepared via a solid-state reaction route. The dielectric properties were investigated in the temperature region of 26-650 • C. The dielectric diffuse anomaly in the dielectric relaxation was found in the high temperature region of 600-650 • C with increasing the measuring frequency, which was related to the dynamic thermal process of ionized oxygen vacancies generated in the high temperature. Two phase transition points were detected during heating, which were found to coexist from

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“…It is important to note that the Nyquist plot (Z*) of all samples show a tail at lowest frequencies, this indicates that the contact effect comes into action, the similar phenomenon was also observed by Lei et al in SmAlO 3 ceramics. 34 The insets of Figs. 4(a)-4(e) show the variation of real part of the impedance (Z ′ ) with frequency at various temperatures from 400 to 600 • C. The plots in the low-frequency region indicate a negative temperature coefficient of resistance since the values of Z ′ decreased with an increase in temperature.…”

Section: Resultsmentioning

confidence: 99%

Oxygen-vacancy-related relaxation and conduction behavior in (Pb1-xBax)(Zr0.95Ti0.05)O3 ceramics

et al. 2014

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Failure behavior of Pb(Zr0.95Ti0.05)O3 ferroelectric ceramics under shock compression J. Appl. Phys. 113, 183501 (2013); 10.1063/1.4803052 Room-temperature magnetoelectric properties of Fe doped BaZr0.05Ti0.95O3 J. Appl. Phys. 113, 17D918 (2013); 10.1063/1.4795425Thermal stability of piezoelectric coefficients in (Ba1−xCax)(Zr0.05Ti0.95)O3: A lead-free piezoelectric ceramic Appl.(Pb 1-x Ba x )(Zr 0.95 Ti 0.05 )O 3 (x=0, 0.025, 0.05, 0.075 and 0.1) ceramics were prepared via a solid-state reaction route. Low-frequency (20 ∼ 2×10 7 Hz) dielectric properties were investigated in the temperature region of 25-650 • C. Ba 2+ doping can slightly reduce the phase transition temperature of ferroelectric to paraelectric. The dielectric diffuse anomaly in the dielectric relaxation was found in the high temperature region of 400-650 • C. Activation energy, calculated from the impedance and conductivity data of samples, suggests that the dielectric relaxation is due to oxygen vacancies generated during the sintering process. Ba 2+ doping can reduce significantly the concentration of oxygen vacancies, and slightly enhance activation energy for the migration of oxygen vacancies. Results of activation energy calculated from impedance and conductance suggest that the dielectric relaxation is due to the short-range hopping of oxygen vacancies, and the conduction due to the movement of doubly-ionized oxygen vacancies. C 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. [http://dx.

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Dielectric relaxations and phase-transition-like behavior in SmAlO3 ceramics at high temperatures

Cited by 11 publications

References 26 publications

Microwave Dielectric Properties and Thermally Stimulated Depolarization Currents of (1 − x)MgTiO₃–xCa_0.8Sr_0.2TiO₃ Ceramics

Microwave Dielectric Properties and Thermally Stimulated Depolarization Currents of (1 − x)MgTiO₃–xCa_0.8Sr_0.2TiO₃ Ceramics

High Energy Storage Density and Impedance Response of PLZT2/95/5 Antiferroelectric Ceramics

Oxygen-vacancy-related relaxation and conduction behavior in (Pb1-xBax)(Zr0.95Ti0.05)O3 ceramics

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Dielectric relaxations and phase-transition-like behavior in SmAlO3 ceramics at high temperatures

Cited by 11 publications

References 26 publications

Microwave Dielectric Properties and Thermally Stimulated Depolarization Currents of (1 − x)MgTiO3–xCa0.8Sr0.2TiO3 Ceramics

Microwave Dielectric Properties and Thermally Stimulated Depolarization Currents of (1 − x)MgTiO3–xCa0.8Sr0.2TiO3 Ceramics

High Energy Storage Density and Impedance Response of PLZT2/95/5 Antiferroelectric Ceramics

Oxygen-vacancy-related relaxation and conduction behavior in (Pb1-xBax)(Zr0.95Ti0.05)O3 ceramics

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Product

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Microwave Dielectric Properties and Thermally Stimulated Depolarization Currents of (1 − x)MgTiO₃–xCa_0.8Sr_0.2TiO₃ Ceramics

Microwave Dielectric Properties and Thermally Stimulated Depolarization Currents of (1 − x)MgTiO₃–xCa_0.8Sr_0.2TiO₃ Ceramics