2014
DOI: 10.1038/am.2014.41
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Diffusion-driven currents in organic-semiconductor diodes

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Cited by 60 publications
(42 citation statements)
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“…To that end, we scan each sample with increasing reverse biases to ensure depletion of the active layer of charge carries. Even in the dark, charge carriers can diffuse into the film from the contacts . Figure A shows the reduction of the real impedance in the low‐frequency region, as a result of charge depletion from the active layer.…”
Section: Resultsmentioning
confidence: 99%
“…To that end, we scan each sample with increasing reverse biases to ensure depletion of the active layer of charge carries. Even in the dark, charge carriers can diffuse into the film from the contacts . Figure A shows the reduction of the real impedance in the low‐frequency region, as a result of charge depletion from the active layer.…”
Section: Resultsmentioning
confidence: 99%
“…For OLED devices, the trap assisted recombination current (or current density) enhances the light emission efficiency via ideality factor. 20,22,55 In such a way, we can adjust the trap assisted recombination process in the dynamically disordered organic systems with the aid of electric eld. In this study, we nd the intercrossing mechanism between coherent and incoherent transport in dynamically disordered systems while applying the electric eld.…”
Section: Field Stretched Dispersion and Charge Trapping Mechanismmentioning
confidence: 99%
“…18 In practice, the device performance will be enhanced by applied electric eld, at which the associated carrier current relies with the dri-diffusion. [19][20][21] In the present model, the hopping rate of hole and electron carriers is controlled by the site energy difference with the aid of applied electric eld. Importantly, we theoretically demonstrate the charge transport mechanism in dynamic disordered TBBI and TIBN derivatives at different electric eld situations.…”
Section: Introductionmentioning
confidence: 99%
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“…The local ideality factor, n, was calculated from the dark J-V curves, in the range 0.3-1.1 V, according to: 36,37 n ¼ e kT…”
Section: Device Characterizationmentioning
confidence: 99%