Diode laser arrays for 1.8 to 2.3 μm wavelength range

Kelemen, M.T.; Gilly, J.; Haag, M.; Biesenbach, Jens; Rattunde, M.; Wagner, Joachim

doi:10.1117/12.809014

Cited by 4 publications

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“…5 I 8 transition at 2078 nm has just been achieved with a slope efficiency of $55% using in-band pumping with a diodepumped Tm:KLuW laser. 19) Here, we report on similar efficiencies achieved at room-temperature with a diode-pumped CW Ho:KLuW laser using unpolarized fiber-coupled GaSb [substrate, with (AlGaIn)(AsSb) compound material for the quantum well 20) ] pump diodes. In addition, we compare the laser performance with the isostructural monoclinic crystals Ho:KYW and Ho:KGdW.…”

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confidence: 72%

Diode-Pumped Ho-Doped KLu(WO₄)₂Laser at 2.08 µm

Jambunathan

Mateos

Pujol

et al. 2011

Appl. Phys. Express

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We report on the efficient continuous-wave diode-pumped laser operation of Ho in the monoclinic KLu(WO 4 ) 2 crystal at 2080 nm, resonantly pumped at a wavelength of 1941 nm by a fiber-coupled GaSb diode stack. A maximum output power of 408 mW and a slope efficiency of 54.5% with respect to the absorbed pump power were achieved. A comparison of the laser performance within the Ho-doped KRE(WO 4 ) 2 (Ho:KRE(WO 4 ) 2 ) family of monoclinic crystals showed a slightly superior performance of Ho:KY(WO 4 ) 2 , achieving a maximum output power of 438 mW and a slope efficiency of 58.8% under identical conditions. #

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confidence: 72%

Diode-Pumped Ho-Doped KLu(WO₄)₂Laser at 2.08 µm

Jambunathan

Mateos

Pujol

et al. 2011

Appl. Phys. Express

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“…While direct comparisons between lasers of different types that are designed and fabricated at different facilities are never possible due to inevitable variations in the optical confinement factors, processing methods, cavity parameters, thermal management, etc., a brief overview is nonetheless useful. At λ ≈ 2.0 µm, T1QW diodes and T1 ICLs have produced cw output powers approaching 2 W and WPEs up to 20-30%, although most of those T1 reports studied broad area lasers (e.g., 100 µm ridge width) that emitted in multiple lateral modes [30], [60], [61]. Broad-area T1QW diodes emitting at λ ≈ 2.4 µm have emitted up to 1.05 W cw, with WPE up to 17.5% [62].…”

Section: Other Considerationsmentioning

confidence: 99%

Comparison of Auger Coefficients in Type I and Type II Quantum Well Midwave Infrared Lasers

Meyer

Canedy

Kim

et al. 2021

IEEE J. Quantum Electron.

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We perform a detailed comparison of 2D Auger coefficients in narrow-gap type-I and type-II quantum wells (T1QWs and T2QWs), and the relative effects of Auger nonradiative decay on midwave infrared lasers employing both types of gain media. Comparison is also made to 3D Auger coefficients in bulk mid-IR materials, by defining a "normalization length" that accounts for the spatial extent of the electron and hole wavefunctions in the quantum wells. The comparisons confirm that Auger recombination in both types of QW is substantially suppressed relative to bulk, due primarily to the effects of compressive strain on the valence band dispersions. We find that the 2D Auger coefficients in T1QWs remain substantially lower than those in T2QWs out to wavelengths beyond 3.5 µm. However, this does not necessarily imply a lower lasing threshold because a substantial fraction of the holes injected into T1QWs occupy lower subbands that do not contribute gain, so more must be injected to reach the lasing threshold. When all of the relevant considerations are combined, the thresholds for the best T1QW and T2QW lasers cross over near λ ≈ 3.0 µm. Other characteristics governing the relative T1QW and T2QW laser performances above threshold, such as maximum output power and wallplug efficiency, are also considered.

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“…The nanoscale pulse-limiting MQW thin film demonstrated in the 1.8-to 2-m spectral range is readily accessible by the optical system supplied by the compact and efficient high-power diode lasers emitting at wavelengths from 1.8 to 2.3 m for their wide range of applications (28). We believe that, because of the multiple intersubband transitions and their broadband Kerr effect in MQW systems (15), it would have similar pulse-limiting performance in the nearinfrared (near-IR) wavelengths from 1 to 1.8 m via the corresponding intersubband transitions.…”

Section: Discussionmentioning

confidence: 99%

Nanoscale optical pulse limiter enabled by refractory metallic quantum wells

Qian

et al. 2020

Sci. Adv.

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The past several decades have witnessed rapid development of high-intensity, ultrashort pulse lasers, enabling deeper laboratory investigation of nonlinear optics, plasma physics, and quantum science and technology than previously possible. Naturally, with their increasing use, the risk of accidental damage to optical detection systems rises commensurately. Thus, various optical limiting mechanisms and devices have been proposed. However, restricted by the weak optical nonlinearity of natural materials, state-of-the-art optical limiters rely on bulk liquid or solid media, operating in the transmission mode. Device miniaturization becomes complicated with these designs while maintaining superior integrability and controllability. Here, we demonstrate a reflection-mode pulse limiter (sub–100 nm) using nanoscale refractory films made of Al2O3/TiN/Al2O3 metallic quantum wells (MQWs), which provide large and ultrafast Kerr-type optical nonlinearities due to the quantum size effect of the MQW. Functional multilayers consisting of these MQWs could find important applications in nanophotonics, nonlinear optics, and meta-optics.

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Diode laser arrays for 1.8 to 2.3 μm wavelength range

Cited by 4 publications

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Diode-Pumped Ho-Doped KLu(WO₄)₂Laser at 2.08 µm

Diode-Pumped Ho-Doped KLu(WO₄)₂Laser at 2.08 µm

Comparison of Auger Coefficients in Type I and Type II Quantum Well Midwave Infrared Lasers

Nanoscale optical pulse limiter enabled by refractory metallic quantum wells

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Diode laser arrays for 1.8 to 2.3 μm wavelength range

Cited by 4 publications

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Diode-Pumped Ho-Doped KLu(WO4)2Laser at 2.08 µm

Diode-Pumped Ho-Doped KLu(WO4)2Laser at 2.08 µm

Comparison of Auger Coefficients in Type I and Type II Quantum Well Midwave Infrared Lasers

Nanoscale optical pulse limiter enabled by refractory metallic quantum wells

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Diode-Pumped Ho-Doped KLu(WO₄)₂Laser at 2.08 µm

Diode-Pumped Ho-Doped KLu(WO₄)₂Laser at 2.08 µm