Direct Extraction Methods for RF Characterization of Extrinsic Parasitic Parameters in 28 nm FDSOI MOSFETs Up to 110 GHz

Yang, Xuejing; Yang, Kyounghoon

doi:10.1109/jeds.2024.3486736

IEEE J. Electron Devices Soc.

2024

DOI: 10.1109/jeds.2024.3486736

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Direct Extraction Methods for RF Characterization of Extrinsic Parasitic Parameters in 28 nm FDSOI MOSFETs Up to 110 GHz

Xuejing Yang,

Kyounghoon Yang

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Direct Extraction Methods for RF Characterization of Extrinsic Parasitic Parameters in 28 nm FDSOI MOSFETs Up to 110 GHz

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References 18 publications

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