Direct Interelectrode Tunneling in GaSe

Kurtin, Stephen; McGill, T. C.; Mead, C. A.

doi:10.1103/physrevb.3.3368

Cited by 38 publications

(8 citation statements)

References 16 publications

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“…Giaever (1960 a, b) observed tunnelling electrical currents through oxide insulators separating superconducting metals. Mead andco-workers (1969, Kurtin, McGill &Mead, 1971) studied electron tunnelling through barriers nearly 100 A thick and confirmed the quantum-mechanical relationships as have also Mann & Kuhn (1971), Kuhn, Mobius & Biicher (1972). Fig.…”

Section: T U N N E L L I N G In Physics (A) Historicalmentioning

confidence: 57%

“…The following estimates of distances which are independent of measurement of electron transfer kinetics have been quoted. Up to 100 A (= b) for insulating layer thickness in tunnelling current measurements in semiconductors (Kurtin et al 1971); 25-35 ^ ( = ^) f°r electrons trapped in frozen solvent tunnelling to scavenger molecules (Beitz & Miller, 1979a, i); > 25 A (= D) between centres of cytochrome haems and R.C. bacterio-chlorophyll in C. vinosum (^ 15 A (= b) between edges) (Tiede et ah, 1978;Dutton, et al, 1979); ^ 4 to 6 A (= b) between HIPIP iron-sulphur centre and cytochrome (Cusanovich & Mizrahi, 1979); ^ 8-4 A (= b) between porphyrin edges of the haems in cytochrome c and cytochrome b s (Salemme, 1979); 8-10 A (= D) between several nearest neighbours in the electron transport chain from succinate to quinone in mitochondria (Salerno & Ohnishi, 1979;Salerno et al 1977); 15-20 A (= D) between haems of cytochromes c and a, a z in mitochondria (Vanderkooi & Erecinska, 1975;Vanderkooi & Landesberg, 1977); > 25 A (= D) between haems of cytochrome c and cytochrome c peroxidase (Gupta & Yonetani, 1973); and 7 A (= b) of intervening solvent between octaethylporphyrin molecules exchanging electrons (Ballard & Mauzerall, 1979;.…”

Section: (F) Electron Tunnellingmentioning

confidence: 99%

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Quantum mechanical tunnelling in biological systems

DeVault

1980

Quart. Rev. Biophys.

330

187

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‘Tunnelling’ is the metaphorical name given to the process, possible in quantum mechanics, but not in classical mechanics, whereby a particle can disappear from one side of a potential-energy barrier and appear on the other side without having enough kinetic energy to mount the barrier. One can think of this as a manifestation of the wave-nature of particles. The wavelength is larger if a particle is lighter. In particular electrons, being very light compared to atoms, have wavelengths as large or larger than atoms at energies found in the valence shells of molecules. Thus, they easily ooze through and around atoms and molecules. We are also concerned with the tunnelling of heavy particles: nuclei, atoms, molecules.

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Section: T U N N E L L I N G In Physics (A) Historicalmentioning

confidence: 57%

Section: (F) Electron Tunnellingmentioning

confidence: 99%

Quantum mechanical tunnelling in biological systems

DeVault

1980

Quart. Rev. Biophys.

330

187

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“…Given CBS's broad applicability, it has found use in myriad contexts: Surfaces and interfaces [2, 5, 8-18, 19-29, 30-40, 41-51], the construction of Wannier functions [3,6,20,[52][53][54][55][56], impurities [54,55,[57][58][59][60][61][62][63][64][65][66][67], highenergy electron diffraction [68], superlattices [40,41,66,[69][70][71][72][73][74][75][76][77], heterostructures [35,46,[78][79][80][81][82][83][84][85][86][87][88], quantum wells [40,41,…”

Section: Introductionmentioning

confidence: 99%

A unified perspective of complex band structure: interpretations, formulations, and applications

Reuter

2016

J. Phys.: Condens. Matter

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Complex band structure generalizes conventional band structure by also considering wavevectors with complex components. In this way, complex band structure describes both the bulk-propagating states from conventional band structure and the evanescent states that grow or decay from one unit cell to the next. Even though these latter states are excluded by translational symmetry, they become important when translational symmetry is broken via, for example, a surface or impurity. Many studies over the last 80 years have directly or indirectly developed complex band structure for an impressive range of applications, but very few discuss its fundamentals or compare its various results. In this work we build upon these previous efforts to expose the physical foundation of complex band structure, which mathematically implies its existence. We find that a material's static and dynamic electronic structure are both completely described by complex band structure. Furthermore, we show that complex band structure reflects the minimal, intrinsic information contained in the material's Hamiltonian. These realizations then provide a context for comparing and unifying the different formulations and applications of complex band structure that have been reported over the years. Ultimately, this discussion introduces the idea of examining the amount of information contained in a material's Hamiltonian so that we can find and exploit the minimal information necessary for understanding a material's properties.

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“…From the above equation we can obtain the below equation following the procedure of Kurtin and co-workers, 3 J͑V ͒ϭ e 2h…”

Section: Formulationmentioning

confidence: 99%

“…1 These studies have been motivated by the possibility of high-frequency applications such as detectors, superconducting quantum interference device ͑SQUID͒ magnetometers, etc., 2 due to the relatively low dielectric constant of the semiconductors. However, up to now tunnel structures in which normal metals are used as electrodes have scarcely been reported 3 although these systems with a semiconductor barrier are intrinsically interesting with regard to the physics of tunneling. Narrow-gap semiconductors ͑NGS͒ are especially good candidates for the tunneling barrier, since a small energy gap leads to coupling of conduction and valence bands, namely, a nonparabolic dispersion relation, which can be described by a small and energy-dependent effective mass.…”

Section: Introductionmentioning

confidence: 99%

Tunneling through a narrow-gap semiconductor with different conduction- and valence-band effective masses

Hatta

Nagao

Mukasa

1996

Journal of Applied Physics

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We have calculated tunneling conductance in metal-narrow-gap-semiconductor ͑NGS͒-metal tunnel junctions. Flietner's two-band model is used to describe the dispersion relation within the energy gap in an isotropic NGS with different conduction-and valence-band edge effective masses. The results are compared with the tunneling conductance calculated by Kane's two-band model, which has been commonly used to describe the tunneling characteristics through the energy gap in semiconductors. These results propose that the tunneling conductance in the tunnel junctions in which a narrow gap semiconductor of largely different conduction-and valence-band effective masses is used as a tunneling barrier can exhibit quite a different behavior, especially in the region of the midgap, from the tunneling conductance described by Kane's two-band model.

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Direct Interelectrode Tunneling in GaSe

Cited by 38 publications

References 16 publications

Quantum mechanical tunnelling in biological systems

Quantum mechanical tunnelling in biological systems

A unified perspective of complex band structure: interpretations, formulations, and applications

Tunneling through a narrow-gap semiconductor with different conduction- and valence-band effective masses

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