Direct measurement of the density and energy level of compensating acceptors and their impact on the conductivity of n-type Ga2O3 films

Islam, Minhazul; Adhikari, Naresh; Hernandez, Armando; Janover, Adam; Novak, Steven W.; Agarwal, Sahil; Codding, Charles L.; Snure, Michael; Huang, Mengbing; Selim, F. A.

doi:10.1063/1.5143030

Cited by 16 publications

(8 citation statements)

References 56 publications

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“…Thus, the current under negative bias will be suppressed. Notably, the trapping/detrapping events are strongly mediated by temperature, that is, less electrons are trapped by the defects when the temperature is increased due to the increased thermal energy of electrons, which makes it easier to escape from the trapping centers − (Figure I). Meanwhile, as the electrons transfer from the EGaIn to KTN, they will not be trapped regardless of the temperature due to the energy structure (Figure D,H).…”

Section: Resultsmentioning

confidence: 99%

Reversible Rectification of Microscale Ferroelectric Junctions Employing Liquid Metal Electrodes

Zhao

et al. 2021

ACS Appl. Mater. Interfaces

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Both ferroelectric crystals and liquid metal electrodes have attracted extensive attention for potential applications in next-generation devices and circuits. However, the interface information between ferroelectric crystals and liquid metal electrodes has so far been lacking. To better understand the optoelectronic properties of microscale ferroelectric crystals (potassium tantalate niobate, KTN) and its potential integration with liquid metal electrodes (a “printing ink” for flexible electric circuit production), microscale KTN crystals sandwiched by eutectic gallium indium (EGaIn, a liquid metal) with varied contact geometries were studied. Unlike the bulk KTN crystal junctions, the microscale KTN junctions show electrical rectifying characteristics upon light illumination, and the directionality of the rectification can be reversed by increasing the ambient temperature to a few degrees. Furthermore, a strong suppression of the current upon increasing voltage, that is, the quasi-negative differential resistance, is observed when the microscale KTN is half-enclosed by the EGaIn electrode. Our results show that trapping/detrapping of carriers affected by the crystal size and the ambient temperature is the dominant physical mechanism for these observations. These results not only facilitate a better understanding of charge transport through the microscale ferroelectric crystals but also advance the design of miniaturized hybrid devices.

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Section: Resultsmentioning

confidence: 99%

Reversible Rectification of Microscale Ferroelectric Junctions Employing Liquid Metal Electrodes

Zhao

et al. 2021

ACS Appl. Mater. Interfaces

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Section: Measurements Of Defects and Impurities In Semiconductorsmentioning

confidence: 99%

“…Recently, TL has been applied to detect compensating acceptors in n‐type Ga 2 O 3 films grown by metal–organic chemical vapor deposition (MOCVD) and measure their density and depth in the bandgap. [ 56 ] The films were homoepitaxially grown on semi‐insulating Fe‐doped Ga 2 O 3 single crystals and doped with Si to achieve n‐type conductivity. Details on the film growth, structural characterization, and impurity measurements can be found in Ref.…”

Section: Applications Of Tl and C‐tsps In Semiconductorsmentioning

confidence: 99%

“…The goal of this article is to explain the basics of TL, inform the reader about its capability as a great tool for measuring the energy levels of donors and acceptors in semiconductors, and bring the attention to the development of cryogenic thermally stimulated photoemission spectroscopy (C-TSPS) [55] which extends TL or thermally stimulated emission measurements to cover the entire range of shallow and deep levels in bandgap materials. Examples on successful applications of TL for the characterization of deep and shallow donors and acceptors in semiconductors [56][57][58][59][60] are discussed in detail revealing how this technique can be a powerful tool in the study of the electrical transport properties of semiconductors. Finally, the potential applications of C-TSPS in new research areas such as corrosion, radiation damage, ion implantation, and defects in oxides and other bandgap materials are discussed.…”

Section: Introductionmentioning

confidence: 99%

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Advanced Thermoluminescence Spectroscopy as a Research Tool for Semiconductor and Photonic Materials: A Review and Perspective

Selim

2023

Physica Status Solidi (a)

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Thermoluminescence (TL) or thermally stimulated luminescence (TSL) spectroscopy is based on liberating charge carriers from traps in the bandgap by providing enough thermal energy to overcome the potential barrier of the traps. It provides a powerful tool to measure the positions of the localized states/traps in the bandgap. Despite that, its applications in semiconductors are very limited. Herein, the basics of TL spectroscopy and the recent advances in the technique with focus on cryogenic thermally stimulated photoemission spectroscopy (C‐TSPS) which extends TL measurements to cryogenic regime and allows the detection of very low concentrations of shallow and deep localized states is discussed. One goal herein is to introduce the reader to the use of TL and C‐TSPS in the characterization of semiconductors, explaining how it can be applied and demonstrating its advantages as a powerful tool for measuring shallow donor/acceptor ionization energies in semiconductors and as a method for characterizing compensating defects. The article also discusses interesting potential applications of C‐TSPS in new research areas such as corrosion and formation of oxide layers on metal surfaces.

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Enhancing Photodetection Performance and Thermal Tolerance of CdS Thin Films through Cobalt (Co) Doping

Halge,

Narwade,

Khanzode

et al. 2023

Adv Eng Mater

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A visible light photodetector is developed using cobalt (Co)‐doped cadmium sulfide (CdS) thin films that exhibits outstanding characteristics with a photocurrent of 284 μA, responsivity of 13.2 A W−1, an extraordinary external quantum efficiency (EQE) of 4550%, exceptional sensitivity (2.84 × 106%), and a rapid response time of 0.6 ms. These remarkable properties are most pronounced in 1 wt% Co‐doped CdS device and decrease with higher Co doping concentrations. This enhanced performance is attributed to the introduction of a defect energy band (DEB) near the CdS valence band, supported by UV‐Vis absorption spectra with a distinct feature at 744 nm. This DEB remains fully populated at room temperature and plays a vital role in responding to temperature variations. Our investigation reveals that 1 wt% Co‐doped CdS device exhibits significant (90%) thermal tolerance compared to pure CdS (10%) and higher Co doping concentrations (20%) in the temperature range of 27–110 °C. This improved thermal stability is attributed to the optimal Co doping concentration, striking a balance between thermal and photo‐excitation processes, thereby stabilizing the photocurrent. This research offers valuable insights into Co‐doped CdS thin films, promising robust and reliable photodetection devices, particularly suitable for applications with fluctuating temperatures.

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Direct measurement of the density and energy level of compensating acceptors and their impact on the conductivity of n-type Ga2O3 films

Cited by 16 publications

References 56 publications

Reversible Rectification of Microscale Ferroelectric Junctions Employing Liquid Metal Electrodes

Reversible Rectification of Microscale Ferroelectric Junctions Employing Liquid Metal Electrodes

Advanced Thermoluminescence Spectroscopy as a Research Tool for Semiconductor and Photonic Materials: A Review and Perspective

Enhancing Photodetection Performance and Thermal Tolerance of CdS Thin Films through Cobalt (Co) Doping

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