Direct measurement of the maximum operating region in GaAs HBTs for RF power amplifiers

Inoue, Akihisa; Nakatsuka, S.; Suzuki, Satoshi; Yamamoto, Kazuya; Shimura, Takaaki; Hattori, Reiji; Mitsui, Y.

doi:10.1109/mwsym.2001.967230

Cited by 9 publications

(1 citation statement)

References 5 publications

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“…In a previous study [13], two categories of breakdown and thermal runaway were found to determine the ruggedness of a hetero junction bipolar transistor (HBT) PA which is mainly used in recent handsets. Severe mismatch conditions at the antenna terminal result in very large voltage peaks or current peaks at the collector of the PA's final stage, in turn, the voltage peaks can lead to breakdown and current peaks can lead to thermal runaway, resulting in a permanent damage to the PA. Figure 1 shows the impedance mismatches that cause these two types of failures.…”

Section: Closed-loop Protection Circuitmentioning

confidence: 99%

Software-Based Adaptive Protection Control against Load Mismatch for a Mobile Power Amplifier Module

Jeon¹,

Jung

Kang

2019

Electronics

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A closed-loop protection method for a radio frequency (RF) power amplifier (PA) module applicable to mobile handsets has been introduced. The load impedance of the PA was adaptively sensed by an embedded impedance detector which was digitally controlled and the system adjusted PA power using a feedback circuit to keep the PA safe based on a load mismatch detection. For verification, a two-stage hetero junction bipolar transistor (HBT) PA module for handsets was fabricated and tested against load mismatch. Measurement results showed that the technique could help PA survive at a 0.5V larger collector bias voltage condition than when the technique was not applied for the same mismatch condition with an acceptable RF performance degradation at nominal condition.

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Section: Closed-loop Protection Circuitmentioning

confidence: 99%