Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN–AlGaN axial heterostructure nanowires

Lari, Leonardo; Walther, T.; Gass, Mhairi; Geelhaar, Lutz; Chèze, Caroline; Riechert, H.; Bullough, T.J.; Chalker, Paul R.

doi:10.1016/j.jcrysgro.2011.06.004

Cited by 5 publications

(2 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Also, material from the catalytic seed can be incorporated into the nanowire body leading to nanowire tapering during the growth. 41 As the particles are normally foreign materials compared with the nanowires, they may adversely affect the nanowire properties. In addition, the catalytic particles may induce stacking faults during the growth, due to the strain between the particle and the nanowire growth interface.…”

Section: Review Of the Growth Methodsmentioning

confidence: 99%

“…However, the particles remain on the top of nanowires after growth. Also, material from the catalytic seed can be incorporated into the nanowire body leading to nanowire tapering during the growth [41]. As the particles are normally foreign materials compared with the nanowires, they may adversely affect the nanowire properties.…”

Section: Catalyst-induced Epitaxymentioning

confidence: 99%

See 1 more Smart Citation

Group III-nitride nanowires

Bao

2017

Materials Science and Technology

View full text Add to dashboard Cite

Group III-nitride nanowires have attracted a lot of research interest in the past decade. They contain both the intrinsic properties of III-nitride materials and some unique properties induced by the nanowire structures. This article reviews the growth methods to obtain III-nitride nanowires, and discusses the pros and cons of both top-down and bottom-up approaches, with detailed discussions on different epitaxy methods. The most widely used catalyst-induced epitaxy and extrinsic particle free epitaxy to grow III-nitride nanowires are compared. The properties of those nanowires make them promising candidates for a broad range of applications, including optoelectronic, electronic and electromechanical devices, which are also presented, with a focus on the current challenges and recent progresses.

show abstract

Section: Review Of the Growth Methodsmentioning

confidence: 99%

Section: Catalyst-induced Epitaxymentioning

confidence: 99%