Direct observation of resistive switching memories behavior from nc-Si embedded in SiO2 at room temperature

Xia, Guoyin; Ma, Zhongyuan; Jiang, Xiaofan; Yang, Huafeng; Xu, Jun; Xu, Ling; Li, Wei; Chen, Kunji; Ding, Feng

doi:10.1016/j.jnoncrysol.2012.01.065

Cited by 15 publications

(6 citation statements)

References 15 publications

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“…In addition, the high-resolution TEM (HRTEM) images of the nanodevice indicate the presence of nanocrystals with a typical size of 5-10 nm embedded in the amorphous SiOx along the edges of the nanopillars (see Figure 3d). The microstructural analysis and the electrical results of Figure 2 are consistent with the results from recent studies, which indicated that RS in a SiOx matrix can be induced in the presence of embedded Si nanocrystals [23,[33][34][35] . More precisely, when an SET voltage is applied, the Si nanocrystals can grow locally by favouring an electrochemical reduction process from One important question is related to the presence of Si nanocrystals in our devices.…”

Section: Resultssupporting

confidence: 90%

“…The microstructural analysis and the electrical results of Figure 2 are consistent with the results from recent studies, which indicated that RS in a SiO x matrix can be induced in the presence of embedded Si nanocrystals. [23,[33][34][35] More precisely, when an SET voltage is applied, the Si nanocrystals can grow locally by favouring an electrochemical reduction process from SiO x → Si. This process induces a Si pathway (Si filaments) along the current flow direction, whereas a RESET voltage can favour the Si → SiO x inverse process.…”

Section: Wwwadvelectronicmatdementioning

confidence: 99%

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Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches

Lin

Adam

Agnus

et al. 2018

Adv Elect Materials

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Emerging nonvolatile memories (NVMs) have currently attracted great interest for their potential applications in advanced low‐power information storage and processing technologies. Conventional NVMs, such as magnetic random access memory and resistive random access memory, suffer from limitations of low tunnel magnetoresistance, low access speed, or finite endurance. NVMs with synergetic advantages are still highly desired for future computer architectures. This study reports a heterogeneous memristive device composed of a magnetic tunnel junction (MTJ) nanopillar surrounded by resistive silicon switches, named resistively enhanced MTJ (Re‐MTJ), which may be utilized for novel memristive memories, enabling new functionalities that are inaccessible for conventional NVMs. The Re‐MTJ device features a high ON/OFF ratio of >1000% and multilevel resistance behavior by combining magnetic switching together with resistive switching mechanisms. The magnetic switching originates from the MTJ, while the resistive switching is induced by a point‐switching filament process that is related to the mobile oxygen ions. Microscopic evidence of silicon aggregated as nanocrystals along the edges of the nanopillars verifies the synergetic mechanism of the heterogeneous memristive device. This device may provide new possibilities for advanced memristive memory and computing architectures, e.g., in‐memory computing and neuromorphics.

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Section: Resultssupporting

confidence: 90%

Section: Wwwadvelectronicmatdementioning

confidence: 99%

Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches

Lin

Adam

Agnus

et al. 2018

Adv Elect Materials

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“…As one can see from the figure, the variation of bilayer number changes both voltages in a linear manner. The variation of SET voltage is in the range of -6.3 to -4.5 V; the variation of the RESET voltage is in the range of -13 to -10 V. These values compare well with the operating voltages of about 4-16 V known from the literature [13,14,27,28]. The resistance ratio measured for these cases changes from 10 5 to 10 7 when the number of bilayers is reduced from ten to six.…”

Section: Resultssupporting

confidence: 81%

Resistive switching control for conductive Si-nanocrystals embedded in Si/SiO₂ multilayers

et al. 2018

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In this paper, we report on the enhanced control of resistive switching in multilayer Si/SiO structures, which permit the formation of Si nanocrystals with a typical size of 5.88 nm and overall good shape homogeneity. The deposition of a different number of Si and SiO bilayers (6, 8 and 10) allowed control of SET/RESET voltages in negative bias ranges 4.5-10 V and 6.3-13 V for six- and ten-bilayer devices, respectively. The corresponding resistance ratio between ON/OFF states varied in the ranges 10-10 for the aforementioned number of bilayers. Based on the result of XPS measurements, we suggest that the resistive switching in the studied system occurs due to the formation and annihilation of Si-Si and Si-O bonds, which serve as conductive pathways and isolating material, respectively.

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“…[9][10][11][12][13][14] Unexpectedly, we recently discovered resistive switching behavior from nc-Si dots embedded in a SiO 2 matrix. 15 Here, we demonstrate the observation of resistive switching effects from multilayered nc-Si dots embedded in a silicon nitride matrix. In order to control the size of the nc-Si, a SiN x /SiN y multilayered structure was designed.…”

mentioning

confidence: 77%

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

Jiang

Yang

et al. 2014

Journal of Applied Physics

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Adding a resistive switching functionality to a silicon microelectronic chip is a new challenge in materials research. Here, we demonstrate that unipolar and electrode-independent resistive switching effects can be realized in the annealed Si-rich SiNx/SiNy multilayers with high on/off ratio of 109. High resolution transmission electron microscopy reveals that for the high resistance state broken pathways composed of discrete nanocrystalline silicon (nc-Si) exist in the Si nitride multilayers. While for the low resistance state the discrete nc-Si regions is connected, forming continuous nc-Si pathways. Based on the analysis of the temperature dependent I-V characteristics and HRTEM photos, we found that the break-and-bridge evolution of nc-Si pathway is the origin of resistive switching memory behavior. Our findings provide insights into the mechanism of the resistive switching behavior in nc-Si films, opening a way for it to be utilized as a material in Si-based memories.

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Direct observation of resistive switching memories behavior from nc-Si embedded in SiO2 at room temperature

Cited by 15 publications

References 15 publications

Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches

Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches

Resistive switching control for conductive Si-nanocrystals embedded in Si/SiO₂ multilayers

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

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Direct observation of resistive switching memories behavior from nc-Si embedded in SiO2 at room temperature

Cited by 15 publications

References 15 publications

Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches

Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches

Resistive switching control for conductive Si-nanocrystals embedded in Si/SiO2 multilayers

Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers

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Resistive switching control for conductive Si-nanocrystals embedded in Si/SiO₂ multilayers