Dislocation multiplication rate in the early stage of germanium plasticity

Fikar, Jan; Dupas, Corinne; Kruml, Tomáš; Jacques, Alain; Martin, Jean‐Luc

doi:10.1016/j.msea.2005.03.075

Cited by 3 publications

(2 citation statements)

References 13 publications

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“…23b) using multiplication laws (26) or (27) was not too successful. 82 This was explained considering that the above multiplication laws do not take into account strain heterogeneity, a well established glide feature, before the UYP. 75 23 Compression test with stress relaxation experiment performed before UYP at 700 K in a n123m Ge single crystal; a solid curve includes relaxation R whereas the dotted curve corresponds to a monotonic test shown for comparison; b detail of relaxation curve 77 provides useful hints about the variation of the mobile dislocation density during deformation.…”

Section: Dislocation Multiplication In Covalent Crystalsmentioning

confidence: 99%

Dislocation motion controlled by interactions with crystal lattice: modelling and experiments

Caillard¹,

Martin²

2005

International Materials Reviews

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In an attempt to establish a correct physical description of the mechanical behaviour of a crystal, the present paper presents first a critical review of two dislocation mobility processes: glide in covalent crystals, and pure climb at high temperatures. Models are presented together with experimental data to test them. The study then gathers available information about the way dislocations multiply, are held up in the substructure and the resultant work hardening of the crystal.

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Section: Dislocation Multiplication In Covalent Crystalsmentioning

confidence: 99%

Dislocation motion controlled by interactions with crystal lattice: modelling and experiments

Caillard¹,

Martin²

2005

International Materials Reviews

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“…10 Such a law has also been mentioned as workable in the case of silicon. 13 We will consider in this paper the generation law adopted by Alexander and Haasen only. 12 Recent investigations on germanium crystals have proposed a generic multiplication law.…”

Section: Introductionmentioning

confidence: 99%

Constitutive modeling of intrinsic silicon monocrystals in easy glide

Cochard

Yonenaga

Gouttebroze

et al. 2010

Journal of Applied Physics

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Articles you may be interested inLithiation-induced tensile stress and surface cracking in silicon thin film anode for rechargeable lithium battery Finite element modeling of indentation-induced superelastic effect using a three-dimensional constitutive model for shape memory materials with plasticity Elastic moduli, strength, and fracture initiation at sharp notches in etched single crystal silicon microstructures Constitutive modeling of silicon materials is currently restricted to the very early stage of deformation. Uniaxial tensile testing of monocrystals oriented for single glide is traditionally simulated by a scalar model relying on the so-called machine equation. The present work uses a crystal plasticity framework to identify the role of secondary slip systems in the yield region. A three-dimensional finite element model of a tensile apparatus is validated by comparison of its outputs to the results yielded by a scalar formulation. Best fits of the constitutive model of Alexander and Haasen to experimental data reveal strong variations in its parameters with temperature. An improved constitutive model for intrinsic silicon monocrystals deformed in single slip is described. Its parameters are identified as analytical functions of temperature. We show its excellent agreement with the observed steady state of deformation in stage I.

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