Domain engineered states over various length scales in (001)-oriented Pb(Mg1∕3Nb2∕3)O3-x%PbTiO3 crystals: Electrical history dependence of hierarchal domains

Abstract

The dependence of the domain structure on poling for (001)-oriented Pb(Mg1∕3Nb2∕3)O3-x%PbTiO3 crystals with x=20, 30, 35, and 40 has been investigated by scanning force microscopy in the piezoresponse mode and by polarized optical microscopy. The results demonstrate a domain hierarchy on various length scales, ranging from nanometers to millimeters, which is notably dependent upon the electrical history of the specimen. The results provide important insights into the nature of the domain engineered state in these crystals.

Processing and properties of 0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 thick films

“…The grain size in this sample is well below 1 m, and the pseudo-cubic character of this sample and the low permittivity at T m support this hypothesis and agree well with the literature data. 39,40 With prolonged sintering times to 8 and 24 h, the pseudocubic character of the PMN-PT vanished, and the grain size and the dielectric permittivity increased. We believe that the degree of ordering in the PMN-PT also increases.…”

Superdomain Structure in Epitaxial Tetragonal PZT Thin Films Under Tensile Strain

“…When passing from one area to the next, the direction of either the net out-of-plane or of the net in-plane polarization changes. Due to these properties, these areas could be considered as 'superdomains', giving rise to an ordering on two different length scales covered by the dimensions of both structures [10][11][12].…”

Crafting the strain state in epitaxial thin films: A case study ofCoFe2O4films onPb(Mg,Nb)Wang1, Luo2, Li3 et al. 2014Phys. Rev. BSelf Cite210120View full textAdd to dashboardCite

“…A phase transformation sequence of R→M A →M C →T has been widely reported in PMN-PT for E//<001> c . 28,29 During P rotation in the monoclinic phases, the OP component of P continuously increases whereas the IP one decreases. Thus, a uniform compressive strain is induced in an heteroepitaxial thin film deposited on such a PMN-PT substrate.…”