Dominant n-type conduction and fast photoresponse in BP/MoS2 heterostructures

Viscardi, Loredana; Durante, Ofelia; De Stefano, Sebastiano; Intonti, Kimberly; Kumar, Arun; Pelella, Aniello; Giubileo, Filippo; Kharsah, Osamah; Daniel, Leon; Sleziona, Stephan; Schleberger, Marika; Di Bartolomeo, Antonio

doi:10.1016/j.surfin.2024.104445

Cited by 5 publications

(1 citation statement)

References 56 publications

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“…This process has offered many flexibilities for creating different device structures at the molecular level. In anticipation of the innovation in technology, two types of LDHs are envisioned: (a) compositional [15][16][17][18][19][20][21] and (b) doped [22,23]. The most attractive feature of SLs has been and still is to plan novel artificial structures with properties otherwise not available in bulk and/or alloyed materials.…”

Section: Introductionmentioning

confidence: 99%

Strain-Dependent Effects on Confinement of Folded Acoustic and Optical Phonons in Short-Period (XC)m/(YC)n with X,Y (≡Si, Ge, Sn) Superlattices

Talwar,

Semone,

Becla

2024

Materials

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Carbon-based novel low-dimensional XC/YC (with X, Y ≡ Si, Ge, and Sn) heterostructures have recently gained considerable scientific and technological interest in the design of electronic devices for energy transport use in extreme environments. Despite many efforts made to understand the structural, electronic, and vibrational properties of XC and XxY1−xC alloys, no measurements exist for identifying the phonon characteristics of superlattices (SLs) by employing either an infrared and/or Raman scattering spectroscopy. In this work, we report the results of a systematic study to investigate the lattice dynamics of the ideal / as well as graded SLs by meticulously including the interfacial layer thickness (≡1–3 monolayers). While the folded acoustic phonons (FAPs) are calculated using a Rytov model, the confined optical modes (COMs) and FAPs are described by adopting a modified linear-chain model. Although the simulations of low-energy dispersions for the FAPs indicated no significant changes by increasing , the results revealed, however, considerable “downward” shifts of high frequency COMs and “upward” shifts for the low energy optical modes. In the framework of a bond polarizability model, the calculated results of Raman scattering spectra for graded SLs are presented as a function of Special attention is paid to those modes in the middle of the frequency region, which offer strong contributions for enhancing the Raman intensity profiles. These simulated changes are linked to the localization of atomic displacements constrained either by the XC/YC or YC/XC unabrupt interfaces. We strongly feel that this study will encourage spectroscopists to perform Raman scattering measurements to check our theoretical conjectures.

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Section: Introductionmentioning

confidence: 99%

Strain-Dependent Effects on Confinement of Folded Acoustic and Optical Phonons in Short-Period (XC)m/(YC)n with X,Y (≡Si, Ge, Sn) Superlattices

Talwar,

Semone,

Becla

2024

Materials

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Two-dimensional XYN3 (X=V, Nb, Ta; Y=Si, Ge): Promising optoelectronic materials in photovoltaic photodetectors

Cui,

Huang,

et al. 2024

Surfaces and Interfaces

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Gate modulation of barrier height of unipolar vertically stacked monolayer ReS2/MoS2 heterojunction

Polumati,

Kolli,

Kumar

et al. 2024

Sci Rep

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This study investigates vertically stacked CVD grown ReS2/MoS2 unipolar heterostructure device as Field Effect Transistor (FET) device wherein ReS2 on top acts as drain and MoS2 at bottom acts as source. The electrical measurements of ReS2/MoS2 FET device were carried out and variation in Ids (drain current) Vs Vds (drain voltage) for different Vgs (gate voltage) revealing the n-type device characteristics. Furthermore, the threshold voltage was calculated at the gate bias voltage corresponding to maximum transconductance (gm) value which is ~ 12 V. The mobility of the proposed ReS2/MoS2 heterojunction FET device was calculated as 60.97 cm2 V−1 s−1. The band structure of the fabricated vDW heterostructure was extracted utilizing ultraviolet photoelectron spectroscopy and the UV–visible spectroscopy revealing the formation of 2D electron gas (2DEG) at the ReS2/MoS2 interface which explains the high carrier mobility of the fabricated FET. The field effect behavior is studied by the modulation of the barrier height across heterojunction and detailed explanation is presented in terms of the charge transport across the heterojunction.

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Dominant n-type conduction and fast photoresponse in BP/MoS2 heterostructures

Cited by 5 publications

References 56 publications

Strain-Dependent Effects on Confinement of Folded Acoustic and Optical Phonons in Short-Period (XC)m/(YC)n with X,Y (≡Si, Ge, Sn) Superlattices

Strain-Dependent Effects on Confinement of Folded Acoustic and Optical Phonons in Short-Period (XC)m/(YC)n with X,Y (≡Si, Ge, Sn) Superlattices

Two-dimensional XYN3 (X=V, Nb, Ta; Y=Si, Ge): Promising optoelectronic materials in photovoltaic photodetectors

Gate modulation of barrier height of unipolar vertically stacked monolayer ReS2/MoS2 heterojunction

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