Doping and annealing effects on ZnO:Cd thin films by sol–gel method

Li, Gang; Zhu, Xuebin; Tang, Xianwu; Song, Wenhai; Yang, Zhaorong; Dai, Jianming; Sun, Yan; Pan, Xu; Dai, Songyuan

doi:10.1016/j.jallcom.2011.01.176

Cited by 101 publications

(36 citation statements)

References 45 publications

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“…This finding indicates that the films have strongly preferred a-axis orientation, which may be attributed to minimization of the crystal surface free energy [1]. Doping with Cd led to changes in the XRD peak intensities.…”

Section: Reasults and Discussionmentioning

confidence: 83%

“…At low doping concentrations, the increase in peak intensity is attributed to the formation of new nucleating centers caused by a decrease in the nucleation energy barrier. However, at higher doping concentrations, the decrease in peak intensity is attributed to the increased saturation of new nucleating centers [1,22].…”

Section: Reasults and Discussionmentioning

confidence: 99%

“…Transparent conducting oxide (TCO) thin films have received a great deal of attention because of their wide applications in optoelectronic devices [1]. TCOs have high thermal stability and low cost [2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

“…Incorporation of Cd into ZnO is very useful for the fabrication of ZnO/ZnCdO heterojunction and super lattice structures [1].…”

Section: Introductionmentioning

confidence: 99%

“…The spray pyrolysis method is used for preparing large numbers of pure and doped thin films because the method is simple, inexpensive, and easy to apply for growing uniform films and allows the coating of large areas [1,24]. This work aims to study the effects of doping concentration and annealing on the structural, morphological, and optical properties of Cd-doped ZnO thin films.…”

Section: Introductionmentioning

confidence: 99%

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Effect Cd Doping on the Structural and Optical Properties of ZnO Thin Films

A.Najim

Rozaiq

2013

ILCPA

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ZnO thin films with Cd/Zn nominal ratios of 0 %, 1 %, 3 %, 5 %, and 7 % and thickness of 0.7 µm were prepared by chemical spray pyrolysis. X-ray diffraction patterns showed that the films have polycrystalline structures and peaks matching the hexagonal ZnO structure. Crystallite sizes ranged from about 35 nm to 87 nm. As the doping concentration increased, full width at half maximum values decreased and crystallite sizes increased. The UV-Vis spectra of the ZnO:Cd films showed high transparency in the visible region. The optical band gap of the ZnO:Cd films decreased from 3.255 eV to 3.17 eV with increasing Cd doping concentration. The transition type was direct, thereby allowing transition. The ZnO:Cd thin films were annealed at 400 °C, and annealing treatment showed improvements in the properties of the derived films.

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Section: Reasults and Discussionmentioning

confidence: 83%

Section: Reasults and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…Incorporation of Cd into ZnO is very useful for the fabrication of ZnO/ZnCdO heterojunction and super lattice structures [1].…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect Cd Doping on the Structural and Optical Properties of ZnO Thin Films

A.Najim

Rozaiq

2013

ILCPA

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Band gap modified Al-doped Zn1−x Mg x O and Zn1−y Cd y O transparent conducting thin films

Duan

Zhao

Liu

et al. 2011

J Mater Sci: Mater Electron

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Al-doped Zn 1-x Mg x O and Zn 1-y Cd y O thin films were prepared on glass substrates by sol-gel method. The codoping thin films showed preferential c-axis orientation, and the lattice constant c evaluated from the shift of the position of (002) peak displayed an increasing evolution from x = 8 at.% to y = 8 at.%, indicating a roughly statistical substitution of Mg 2? and Cd 2? for Zn 2? in their solid solution. The effects of narrowing and widening band gap (E g ) on conductivity of (Cd, Al) and (Mg, Al) codoped ZnO thin films were simultaneously investigated using transmission spectra and electrical measurements. The transmittances of these films are obviously decreased by vacuum annealing to 50-60%. However, the carrier concentration and Hall mobility both increase, and resistivity decreases with narrowing band gap in 1 at.% Al-doped Zn 1-x Mg x O and Zn 1-y Cd y O thin films from x = 8 at.% to y = 8 at.%. It is revealed that the conductivity of Al-doped ZnO thin films could be enhanced by this simple band gap modification.

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