Doping induced threshold voltage and I<sub>ON</sub>/I<sub>OFF</sub> ratio modulation in surrounding gate MOSFET for analog applications

Das, Amit K.; Kanaujia, Binod Kumar; Deswal, S. S.; Rewari, Sonam; Gupta, Rajeev

doi:10.1109/edkcon56221.2022.10032940

Cited by 16 publications

(11 citation statements)

References 20 publications

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“…The lateral graded doping in channel improves the transconductance and decreases the drain conductance [37]. It is worth noticing that highest sensitivity is obtained in case of forward graded doping when N Ch1 = 10 10 /cm 3 , N Ch2 = 10 14 /cm 3 , and N Ch3 = 10 18 /cm 3 .…”

Section: Physical Structure and Specificationsmentioning

confidence: 97%

“…In the modern era of digitalization, field-effect transistor (FET) has emerged as a multi-functional device which has numerous applications in multifarious fields [1][2][3][4]. Different devices [5][6][7][8][9][10][11] and sensors [12,13] have been investigated (along with the fabrication techniques [14]) with the continuous progress in science and technology.…”

Section: Introductionmentioning

confidence: 99%

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Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications

Das

Rewari

Kanaujia

et al. 2023

Int J Numerical Modelling

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This paper proposes a compact analytical model and comprehensively investigates the biosensing performance of a novel dielectric modulated triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with a step graded channel. Solving the 2D Poisson's equation yields an analytical expression of threshold voltage, channel potential, drain current and sub threshold swing. The sensitivity variation in the biosensor has been thoroughly studied by varying different device parameters to investigate its biosensing performance. Graded doping in channel offers enhanced sensitivity than a non‐graded doped channel when the doping of the channel is more near the drain end than source end which is due to stronger electric field and gate capacitance. Effect of fill‐in factor for different biomolecules on the sensitivity has been thoroughly discussed. Different analytical results show an excellent agreement with the simulations done on SILVACO ATLAS TCAD simulator.

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Section: Physical Structure and Specificationsmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications

Das

Rewari

Kanaujia

et al. 2023

Int J Numerical Modelling

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“…28 Additionally, the outcome of temperature has also been studied on linearity and distortion FOMs. The linearity and distortion FOMs are estimated as per Equations (9)(10)(11)(12)(13)(14)(15)(16) and designed in relation of gate voltage.…”

Section: Impact Of Temperaturementioning

confidence: 99%

“…To overcome this problem the researchers have proposed many fabrication techniques discussed in the fabrication part. Various design engineering techniques are also performed to overcome this drawback in NWFET 12–15 …”

Section: Introductionmentioning

confidence: 99%

“…Various design engineering techniques are also performed to overcome this drawback in NWFET. [12][13][14][15] The conventional MOSFET design offers the severe drawback of abrupt source-drain junctions and high parasitic source-drain resistance. These issues can be overcome by using the Schottky barrier (SB) MOSFET in place of conventional MOSFET.…”

Section: Introductionmentioning

confidence: 99%

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Analytical analysis and linearity performance of dual metalhigh‐KSchottky nanowireFET(DM‐HK‐SNWFET)

Sharma

Nath

Deswal³

et al. 2023

Int J Numerical Modelling

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This study's objectives are to deliver a relative analysis of non‐uniformly doped (NUD) and uniformly doped Dual Metal High‐K Schottky nanowire FET (DM‐HK‐SNWFET). Surface potential, subthreshold current, subthreshold swing, and drain current have been expressed and analyzed by resolving 2D Poisson's equation with suitable boundary conditions. The analog performance of the device is verified by examining cut‐off frequency (fT), trans‐conductance frequency product (TFP), gain frequency product (GFP), and gain trans‐conductance frequency product (GTFP). The results show suitable RF circuit parameters with a high switching ratio (≈3 × 109) and low subthreshold swing (61 mV/decade) for NUD‐DM‐HK‐SNWFET. Additionally, linearity frequency of merits (FOMs) and distortion performance are also studied by numerically calculating higher order voltage and current intercept point (VIP2, VIP3, IIP3, IMD3); 1‐dB compression point and Harmonics distortions (HD2 and HD3) using transconductance (gm1) along with its higher derivatives gm2 and gm3. These parameters exhibit high‐level linearity and low‐level distortion at zero crossover points in NUD‐DM‐HK‐SNWFET, making it a better contender for low‐power and high‐performance applications.

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5‐aminobenzimidazole@graphene oxide nanosheets doped polyimide nanocomposites: Low‐temperature curing and improved mechanical properties

Hu,

Tong,

Wang

et al. 2024

Polymer Composites

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The preparation of polyimide matrix composites with low curing temperature and high mechanical properties is of great importance. In this study, a low‐cost and multi‐functional nanofiller, 5‐aminobenzimidazole grafted graphene oxide (5‐ABZ@GO) has been designed. By nucleophilic attack on 5‐aminobenzimidazole basic groups and doping of GO, the above requirements of polyimide composites were skillfully realized. The results show that when the addition of 5‐ABZ@GO is 1%, the 5‐ABZ@GO/PI nanocomposites can achieve complete imidized at 200°C. Moreover, the nanocomposite prepared by imidization at 200°C has good mechanical and thermal properties (tensile strength is 141.64 MPa, modulus is 6.05 GPa, T5% is as high as 543.5°C), which is better than the PI composites prepared at 320°C. This study provides an innovative approach to preparing polyimide composites that meet mechanical performance requirements while utilizing comparatively lower curing temperatures, low curing temperature polyimide resins provide a new path for integrated composites with structure–function integration.

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Doping induced threshold voltage and I_ON/I_OFF ratio modulation in surrounding gate MOSFET for analog applications

Cited by 16 publications

References 20 publications

Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications

Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications

Analytical analysis and linearity performance of dual metalhigh‐KSchottky nanowireFET(DM‐HK‐SNWFET)

5‐aminobenzimidazole@graphene oxide nanosheets doped polyimide nanocomposites: Low‐temperature curing and improved mechanical properties

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Doping induced threshold voltage and ION/IOFF ratio modulation in surrounding gate MOSFET for analog applications

Cited by 16 publications

References 20 publications

Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications

Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing applications

Analytical analysis and linearity performance of dual metalhigh‐KSchottky nanowireFET(DM‐HK‐SNWFET)

5‐aminobenzimidazole@graphene oxide nanosheets doped polyimide nanocomposites: Low‐temperature curing and improved mechanical properties

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Doping induced threshold voltage and I_ON/I_OFF ratio modulation in surrounding gate MOSFET for analog applications