Double boundary trench isolation effects on a stacked gradient homojunction photodiode array

Abstract

Abstract-The effect of the width of inter-pixel double boundary trench isolation on the response resolution of a two dimensional CMOS compatible stacked gradient homojunction photodiode array was simulated. Insulation and P-doped double boundary trench isolation were compared. Both geometries showed improved crosstalk suppression and enhanced sensitivity compared to photodiode geometries previously investigated, combined with a reduction in fabrication complexity for the insulation DBTI configuration.

Extrinsic Evolution of the Stacked Gradient Poly-Homojunction Photodiode Genre

“…17) have been characterised using the same device simulator, with device and laser characteristics similar to previous photodiode configurations simulated to allow useful comparisons. (Jansz & Hinckley, 2008 Table 4 contains the horizontal axis legend of the photodiode configurations (negative values) for Fig. 18 and Fig.…”

“…Frontwall crosstalk is below the backwall response. The physical mechanism driving the reduction in crosstalk for DBTI StaG is internal reflection of carriers generated in the neighbouring pixel and between the twin BTI (Jansz & Hinckley, 2008).…”

“…Higher doped semiconductor with the same dopant type as the substrate (Jansz-Drávetzky, 2003;Hinckley et al, 2007;Jansz et al, 2008;. ii.…”

“…Higher doped semiconductor with opposite dopant type to the substrate iii. Insulators such as SiO 2 (Jansz et al, 2008). b.…”

Simulation of a hybrid polywell and stacked gradient poly-homojunction CMOS photodiode

“…4), with up to 70% reduction in crosstalk achievable. Crosstalk is still significantly greater than other StaG photodiode hybrids [5], Guard Junction photodiodes [6] and PIN geometries. Back illuminated sensitivity is only marginally improved by the inclusion of the StaG (0.3%) being nearly at 100% QE.…”