Double gate dielectric stacks with Gd2O3 layer for application in NVSM devices

Mroczynski, Robert; Jaśiński, Jakub; Gottlob, H. D. B.; Schmidt, Matthias

doi:10.1016/j.mee.2013.11.001

Cited by 3 publications

(12 citation statements)

References 16 publications

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“…38,39 The high dielectric constant, thermodynamic strength, high band energy gap, sputtering power, high power density, and longevity have immensely favored REOs as a suitable dopant for various electronic devices. 31,40,41 They have also been used in the development of electrochemical sensors (i.e., a nanocomposites-based pHsensitive sensor for nitrite determination 42 ) and detectors (i.e., nanosensor for toxins detection 43 ) and electronic devices (i.e., ultrathin films with a high dielectric constant, k 26,44 ). The heat treatment is common in REOs-doped phosphors applications.…”

Section: An Overview Of Reos and Their Applicationsmentioning

confidence: 99%

“…The suppressed electric behavior of a memory device at an elevated temperature represents a challenge. 26 Another critical point is the material possessing high-k, which is at the core of electronic devices. 46 Conventionally, SiO 2 has been used for the gate dielectric layer of metal oxide semiconductor field effect transistors (MOSFETs).…”

Section: An Overview Of Reos and Their Applicationsmentioning

confidence: 99%

“…83 Furthermore, the lessening of the retention period extrapolated at 10 years on the order of 12% was resolved, which is comparatively low in contrast with metal− insulator−semiconductors (MIS) stacks alongside high-k dielectric layers of atomic layer deposition (ALD). 26 Apart from these, the gadget constructed of ITO/Eu 2 O 3 /ITO/PET demonstrates superior features. For example, gadget switching became free resistive whose resistance on/off ratio is 10 4 where high AC endurance is more significant than 10 7 cycles, and good retention is greater than 10 4 s. 27 Because of the bipolar switching features, the device made of Pt/Yb 2 O 3 /TiN improves the on/off ratio and reduces the reset and set voltage.…”

Section: Electronic Devicesmentioning

confidence: 99%

“…Without any doubt, SiO x N y devices' results are promising and make the innovation of the Gd 2 O 3 layer worthy for nextgeneration appliances. 26 The charge loss phenomena and working speed are simultaneously dominated by the thickness of the Gd 2 O 3 film as well as blocking oxide. Hence, because of the thickness of the gadolinium(III) oxide film Gd 2 O 3 −NCs memory devices were proposed for future large-scale manufacturing.…”

Section: Electronic Devicesmentioning

confidence: 99%

“…In-depth research, however, is required to build up the innovation of dual-gate dielectric stacks with Gd 2 O 3 layers for memory applications. 26 5.2.2. In MOS Devices.…”

Section: Challenges Of Using Reosmentioning

confidence: 99%

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Recent Progress of Rare Earth Oxides for Sensor, Detector, and Electronic Device Applications: A Review

Hossain

Ahmed

Khan

et al. 2021

ACS Appl. Electron. Mater.

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Rare earth oxides (REOs) are deemed important from both industrial implementation and research insight perspectives. One of the most conspicuous attributes of REOs is sensing, which contributes significantly to the development of diversified and robust systems of sensors and detector devices. However, there has not been any organized review that has pointed out critical insights from the sensor, detector, and electronic device perspectives that can invoke further studies to investigate the prospective and commercially relevant areas to date. To address this limitation, this review undertakes a focused report approach. From this concise yet comprehensive review, it has been prominent that the most significant contributions to the sensing and detecting fields by the REOs are in electrochemical, temperature, humidity, radiation, gas, and biosensors. Moreover, in terms of electronic device development, REOs have had a significant impact on memory devices, metal oxide semiconductors, dielectric materials, capacitors, energy storage devices, and so on. Furthermore, one of the key findings of the study is that the REOs have flexible doping (e.g., Er3+, Yb3+, Y3+, etc.) capability combined with other host materials such as HfO2 film, SiO2 stacks, TiO2, SnO2 nanostructures, etc., which will likely make REO-based electrochemical sensor and biosensor development the most promising sector in the coming years. Despite the impressive aspects, biocompatibility issues in several biological and biomedical systems along with the hygroscopic nature of REOs in electronic devices remain as concerns. However, these issues can be addressed by the advancement of intricate technologies such as targeted manipulation of the electronic configuration of REOs, multifarious doping experiments to obtain alternative mechanisms, etc. to obtain superior biocompatibility, and device development systems that are noninvasive to the environment. From the commercialization front, memory devices and energy storage devices will be the focusing points for large-scale investors due to improved mechanical (i.e., Young’s modulus, intrinsic stress, etc.) and electrical (i.e., high dielectric constant, resistivity, relative permittivity, etc.) properties, while REO-based metal oxide semiconductor and capacitor development is likely to be research-oriented for the next few years before making the eventual move to futuristic applications at a large industrial scale. In short, this review reports a substantial number of relevant studies that will pave the way for further experimental and computational investigations on REOs and their sensor, detector, and electronic device aspects.

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Section: An Overview Of Reos and Their Applicationsmentioning

confidence: 99%

Section: An Overview Of Reos and Their Applicationsmentioning

confidence: 99%

Section: Electronic Devicesmentioning

confidence: 99%

Section: Electronic Devicesmentioning

confidence: 99%

“…In-depth research, however, is required to build up the innovation of dual-gate dielectric stacks with Gd 2 O 3 layers for memory applications. 26 5.2.2. In MOS Devices.…”

Section: Challenges Of Using Reosmentioning

confidence: 99%

See 3 more Smart Citations