Double hysteresis loops induced by Mn doping in Pb0.99Nb0.02(Zr0.95Ti0.05)0.98O3 ferroelectric ceramics

Meng, Jian; Li, Xuhai; Zhu, Jiliang; Zhu, Xiaohong; Shi, Wei; Li, Lihua; Xiao, Dingquan; Zhu, Jianguo

doi:10.1016/j.cap.2009.07.012

Cited by 23 publications

(3 citation statements)

References 15 publications

(28 reference statements)

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“…15 Double hysteresis loops (P-E loops) are an exceptional phenomenon in ferroelectrics (FE), which are often observed in antiferroelectric (AFE) materials. Although double P-E loops are frequently observed in ferroelectric ceramics [16][17][18] and bilayer thin films, 19 there is little work reporting similar characteristics in single layer thin films such as Pb(Zr 0.8 Ti 0.2 )O 3 thin films. Therefore research on the feasible formation of double P-E loops in single-layered ferroelectric thin films and their relation to defect dipoles is of great scientific and technological significance.…”

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confidence: 96%

Double hysteresis loop induced by defect dipoles in ferroelectric Pb(Zr0.8Ti0.2)O3 thin films

Zhu

et al. 2011

Journal of Applied Physics

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Pb(Zr0.8Ti0.2)O3 (PZT80/20) thin films were deposited on the Pt(111)/Ti/SiO2/Si(100) substrates by RF magnetron sputtering. Mainly perovskite crystalline phase with highly (202)-preferred orientation, determined by x-ray diffraction, was formed in the lead zirconate titanate (PZT)(80/20) thin films. Polarization measurements of the unannealed and aged films showed a clear double hysteresis loop. However, the double hysteresis loop phenomenon was greatly suppressed in the PZT thin films annealed under pure oxygen, and thus they exhibited larger remnant polarization (Pr = 6.3 μC/cm2). The related mechanism for the appearance of constricted and double hysteresis loops was investigated to be associated with the realignment and disassociation of defect dipoles via oxygen octahedral rotations or oxygen vacancy diffusion. The butterfly-shaped C-V characteristic curve with a valley gave further evidence for double hysteresis loop characteristic in the unannealed and aged PZT thin films.

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confidence: 96%

Double hysteresis loop induced by defect dipoles in ferroelectric Pb(Zr0.8Ti0.2)O3 thin films

Zhu

et al. 2011

Journal of Applied Physics

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“…For the BiFeO 3 system, the typical instances involve Ca 2+ :BiFeO 3 , , Ni 2+ :BiFeO 3 , Mn 2+/3+ :BiFeO 3 , and so on. For the Pb-based systems, they include Fe 3+ :Pb(MgNb)O 3 –PbTiO 3 , Mn 2+/3+ :Pb(Mg 1/3 Sb 2/3 )O 3 –Pb(ZrTi)O 3 , Mn 2+/3+ :(PbSr)TiO 3 , Mn 2+/3+ :Pb 0.99 Nb 0.02 (Zr 0.95 Ti 0.05 ) 0.98 O 3 , (Li + , Al 3+ ):PbZrO 3 , and so on. On the basis of the symmetry-conforming short-range ordering mechanism, Ren et al thought that the defect symmetry in orthorhombic and rhombohedral crystal symmetry should be as shown in Figure C and D, respectively.…”

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confidence: 99%

Defects and Aliovalent Doping Engineering in Electroceramics

et al. 2020

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Since the positive influences of defects on the performance of electroceramics were discovered, investigations concerning on defects and aliovalent doping routes have grown rapidly in the fields of inorganic chemistry and condensed matter physics. In this article, we summarized the types of defects in electroceramics as well as characterization tools of defects and highlighted the effects of intrinsic and extrinsic defects on the material performances with the emphasis on dielectric, ferroelectric, and piezoelectric properties. We mainly introduced defect related theoretical simulation and experimental results in several typical incipient ferroelectrics, ferroelectrics, and antiferroelectrics. Hence, the influences of defects on the crystal lattice were summed up, and then the main physical mechanisms were highlighted. Particularly, the performance enhancements of aliovalently doped electroceramics were also evaluated and reviewed. Finally, the outlook and challenges were discussed on the basis of their current developments. This article covers not only an overview of the state-of-the-art advances of defects and aliovalent doping routes in electroceramics but also the future prospects that may open another window to tune the electrical performance of electroceramics via intentionally introducing certain defects.

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“…16,17 For PZT 95/5, piezoelectric and dielectric properties can be modified by doping or introducing various defects. There have been a lot of reports on modified PZT 95/5 materials, such as: Pb 0.97 La 0.02 (Zr 0.95 Ti 0.05 )O 3 , 18,19 Pb 0.99 Nb 0.02 (Zr 0.95 Ti 0.05 ) 0.98 O 3 , 20 etc. It cannot be negligible that the self-doping by oxygen vacancies (OVs) is of essence since oxygen vacancy is one of the fundamental intrinsic defects in a Corresponding author, E-mails: xgtang@gdut.edu.cn (X.G.…”

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confidence: 99%

Oxygen-vacancy-related relaxation and conduction behavior in (Pb1-xBax)(Zr0.95Ti0.05)O3 ceramics

et al. 2014

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Failure behavior of Pb(Zr0.95Ti0.05)O3 ferroelectric ceramics under shock compression J. Appl. Phys. 113, 183501 (2013); 10.1063/1.4803052 Room-temperature magnetoelectric properties of Fe doped BaZr0.05Ti0.95O3 J. Appl. Phys. 113, 17D918 (2013); 10.1063/1.4795425Thermal stability of piezoelectric coefficients in (Ba1−xCax)(Zr0.05Ti0.95)O3: A lead-free piezoelectric ceramic Appl.(Pb 1-x Ba x )(Zr 0.95 Ti 0.05 )O 3 (x=0, 0.025, 0.05, 0.075 and 0.1) ceramics were prepared via a solid-state reaction route. Low-frequency (20 ∼ 2×10 7 Hz) dielectric properties were investigated in the temperature region of 25-650 • C. Ba 2+ doping can slightly reduce the phase transition temperature of ferroelectric to paraelectric. The dielectric diffuse anomaly in the dielectric relaxation was found in the high temperature region of 400-650 • C. Activation energy, calculated from the impedance and conductivity data of samples, suggests that the dielectric relaxation is due to oxygen vacancies generated during the sintering process. Ba 2+ doping can reduce significantly the concentration of oxygen vacancies, and slightly enhance activation energy for the migration of oxygen vacancies. Results of activation energy calculated from impedance and conductance suggest that the dielectric relaxation is due to the short-range hopping of oxygen vacancies, and the conduction due to the movement of doubly-ionized oxygen vacancies. C 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. [http://dx.

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Double hysteresis loops induced by Mn doping in Pb0.99Nb0.02(Zr0.95Ti0.05)0.98O3 ferroelectric ceramics

Cited by 23 publications

References 15 publications

Double hysteresis loop induced by defect dipoles in ferroelectric Pb(Zr0.8Ti0.2)O3 thin films

Double hysteresis loop induced by defect dipoles in ferroelectric Pb(Zr0.8Ti0.2)O3 thin films

Defects and Aliovalent Doping Engineering in Electroceramics

Oxygen-vacancy-related relaxation and conduction behavior in (Pb1-xBax)(Zr0.95Ti0.05)O3 ceramics

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