Drastic evolution of point defects in vertically grown ZnO nanorods induced by lithium ion implantation

Das, Asish R.; Basak, Durga

doi:10.1039/d2cp02215j

Cited by 6 publications

(3 citation statements)

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“…The shift in Raman spectra generally arises from structural disorder, phonon confinement, defects, and strain. , The peak P1 ∼560 cm –1 is generally attributed to the Zn i related defects, whereas the peak ∼580 cm –1 (P2) is assigned for A 1 (LO) Raman mode. , For 2AZO0 film, the A 1 (LO) peak is red-shifted to ∼570 cm –1 . The presence of E 1 (LO) mode ∼590 cm –1 (P3) has also been observed for 2AZO0 film only. , Often, it is quite difficult to distinguish the contribution of the A 1 (LO) and E 1 (LO) modes due to their adjacent proximity . These two A 1 (LO) and E 1 (LO) modes are correlated to oxygen-related disorders, basically V O -type of defects and their complexes. , From the area under the fitted peaks P1 and P2, we have extracted various defect contents as a function of Zn overlayer thickness, as shown in Figure c.…”

Section: Resultsmentioning

confidence: 88%

“…38,39 Often, it is quite difficult to distinguish the contribution of the A 1 (LO) and E 1 (LO) modes due to their adjacent proximity. 40 These two A 1 (LO) and E 1 (LO) modes are correlated to oxygen-related disorders, basically V O -type of defects and their complexes. 38,40 From the area under the fitted peaks P1 and P2, we have extracted various defect contents as a function of Zn overlayer thickness, as shown in Figure 3c.…”

Section: Resultsmentioning

confidence: 99%

“…40 These two A 1 (LO) and E 1 (LO) modes are correlated to oxygen-related disorders, basically V O -type of defects and their complexes. 38,40 From the area under the fitted peaks P1 and P2, we have extracted various defect contents as a function of Zn overlayer thickness, as shown in Figure 3c. It can be clearly observed that the amount of Zn i -related defects and their complexes has been increased gradually with an increase in the Zn overlayer thickness, with a monotonic decrease in the V Orelated defects.…”

Section: Resultsmentioning

confidence: 99%

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Interaction of an Ultrathin Zinc Surface Passivation Layer with a Room Temperature-Deposited Al-Doped ZnO Film Leading to Highly Improved Electrical Transport Properties

Pal

Basak

2023

J. Phys. Chem. C

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In this study, we have demonstrated the interaction of an ultrathin Zn surface passivation layer with a room temperature (RT)-deposited Al-doped ZnO (AZO) film, leading to highly improved electrical transport properties. The resistivity of the AZO film increases monotonically with time in ambient conditions (from 0.02 to 0.33 Ω·cm), while overlaying a 4 nm Zn layer on AZO film stabilizes the resistivity to a value of 4.56 × 10–3 Ω·cm, which decreases to a value of 2.40 × 10–3 Ω·cm for a 5.3 nm Zn overlayer. The remarkable enhancement in the electrical stability and the conductivity value is attributed to a probable diffusion of Zn species into the AZO films, passivating Zn vacancy (VZn) and forming Zn interstitial (Zni), Zni-VO donor complexes supported by RT Raman and X-ray photoelectron spectroscopy studies. Temperature-dependent resistivity measurement reveals the semiconducting behavior of the AZO films with 4 and 6 nm Zn overlayer, where the transport process is governed by thermally activated band conduction at and below RT (up to ∼247 K), followed by nearest-neighbor hopping and Mott variable range hopping mechanisms as the temperature goes down. The 5.3 nm Zn-coated AZO film shows metallic behavior at RT and a metal to semiconductor transition ∼220 K deviating from the Boltzmann conduction process due to electron–electron interaction phenomena.

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