Dry Etching for Micromachining Applications

Tadigadapa, Srinivas; Lärmer, Franz

doi:10.1007/978-0-387-47318-5_7

Cited by 5 publications

(10 citation statements)

References 58 publications

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“…There are a number of important considerations for RIE etch processes [ 13 , 14 , 15 ]. The etch rate is defined as the depth of the etching per unit time.…”

Section: Reactive Ion Etching (Rie) Considerationsmentioning

confidence: 99%

“…In general, there are two primary mechanisms that sidewall passivation is obtained. One is a continuous sidewalls passivation and the second is a cyclical passivation [ 15 ].…”

Section: Deep Reactive Ion Etching (Drie) Of Siliconmentioning

confidence: 99%

“…The main disadvantage of cryogenic etching is the low process temperature. Since the substrate is at such a low temperature, it attracts particulates and contaminates in the process chamber that can lodge onto the surface thereby creating micro-masking effects exhibited in the form of etching grass [ 15 ].…”

Section: Cyrogenic Driementioning

confidence: 99%

“…The cryogenic DRIE process for silicon etching uses continuous passivation, that is really only practical at very low temperatures. While this process allows deep and high-aspect-ratio etches to be performed in silicon, the process is prone to micro-masking effects [ 15 ]. This is due to the balancing of the formation of silicon oxides as passivation layers that require significant ion energies to remove and the need to remove these passivation layers at the trench floors of the features being etched.…”

Section: Bosch Tm Driementioning

confidence: 99%

“…Figure 6 illustrates how the Bosch TM deep reactive ion etching process is performed [ 13 , 15 , 23 ]. The etch is a cyclical dry plasma etch process that alternates between a high-density plasma to etch the silicon in one part of the cycle and then deposit an etch resistant polymer layer on the sidewalls in the other part of the cycle.…”

Section: Bosch Tm Driementioning

confidence: 99%

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Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication

Huff

2021

Micromachines

143

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This paper reviews the recent advances in reaction-ion etching (RIE) for application in high-aspect-ratio microfabrication. High-aspect-ratio etching of materials used in micro- and nanofabrication has become a very important enabling technology particularly for bulk micromachining applications, but increasingly also for mainstream integrated circuit technology such as three-dimensional multi-functional systems integration. The characteristics of traditional RIE allow for high levels of anisotropy compared to competing technologies, which is important in microsystems device fabrication for a number of reasons, primarily because it allows the resultant device dimensions to be more accurately and precisely controlled. This directly leads to a reduction in development costs as well as improved production yields. Nevertheless, traditional RIE was limited to moderate etch depths (e.g., a few microns). More recent developments in newer RIE methods and equipment have enabled considerably deeper etches and higher aspect ratios compared to traditional RIE methods and have revolutionized bulk micromachining technologies. The most widely known of these technologies is called the inductively-coupled plasma (ICP) deep reactive ion etching (DRIE) and this has become a mainstay for development and production of silicon-based micro- and nano-machined devices. This paper will review deep high-aspect-ratio reactive ion etching technologies for silicon, fused silica (quartz), glass, silicon carbide, compound semiconductors and piezoelectric materials.

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“…There are a number of important considerations for RIE etch processes [ 13 , 14 , 15 ]. The etch rate is defined as the depth of the etching per unit time.…”

Section: Reactive Ion Etching (Rie) Considerationsmentioning

confidence: 99%

“…In general, there are two primary mechanisms that sidewall passivation is obtained. One is a continuous sidewalls passivation and the second is a cyclical passivation [ 15 ].…”

Section: Deep Reactive Ion Etching (Drie) Of Siliconmentioning

confidence: 99%

Section: Cyrogenic Driementioning

confidence: 99%

Section: Bosch Tm Driementioning

confidence: 99%

Section: Bosch Tm Driementioning

confidence: 99%

See 3 more Smart Citations

Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication

Huff

2021

Micromachines

143

View full text Add to dashboard Cite

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Lab-on-a-chip for high frequency acoustic characterization

Gao

Carlier

Wang

et al. 2013

Sensors and Actuators B: Chemical

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Inkwells for on-demand deposition rate measurement in aerosol-jet based 3D printing

Montes

Das

et al. 2017

J. Micromech. Microeng.

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Aerosol-jet printing (AJP) is an important direct-write printing technology based on additive manufacturing methods. Numerous research groups have utilized AJP for the fabrication of electronic circuits and devices. However, there has not been any real-time or even any on-demand method for quantitatively measuring and/or setting the deposition rate of an AJ ink stream. In this paper, we present a method for measuring the deposition rate of an AJ ink stream by printing into an array of inkwells that were fabricated using photolithography and were characterized using x-ray tomography and optical profilometry. These inkwell arrays were then used to establish a set of deposition rates namely 0.0011, 0.0024, 0.0035, 0.0046 and 0.0059 mm3 s−1 that were subsequently compared with independently-measured deposition rates obtained by printing the ink stream into a weighing pan for a specified time and calculating the resulting deposition rate from the weight of the printed sample. From this comparison, it is observed that, for a human operator, the error in setting a specific deposition rate is less for inkwell fill times greater than 3 s and greater for fill times less than 3 s. This observation indicates that the average volume of an inkwell array should be at least three times the desired deposition rate (Vinkwell > 3R). It was also observed that when the diameter of the inkwell was only slightly larger than the ink stream diameter, the ink uniformly wets the sidewall of the inkwell and results in a well filled inkwell for which the point at which it is just fully filled is easily observable. Finally, the interactions of the ink with both ‘philic’ and ‘phobic’ inkwells were studied illustrating the ability to use inkwells of various materials for setting the desired deposition rates for a variety of AJ printable inks.

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Dry Etching for Micromachining Applications

Cited by 5 publications

References 58 publications

Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication

Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication

Lab-on-a-chip for high frequency acoustic characterization

Inkwells for on-demand deposition rate measurement in aerosol-jet based 3D printing

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