Dual Gate and Drain Supply Modulation of an X-Band PA

Duffy, Maxwell R.; Lasser, Gregor; Cappello, Tommaso; Popović, Zoya

doi:10.1109/mwsym.2019.8701024

Cited by 2 publications

(5 citation statements)

References 14 publications

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“…This study expands on previous work in [22] by developing gate‐shaping functions dynamically rather than statically, resulting in unique shaping functions at each power level with improvements in both efficiency and linearity. It is found experimentally that the PA dynamic operation deviates substantially from the static case, thus requiring dynamic characterisation for capturing the relevant effects.…”

Section: Introductionsupporting

confidence: 54%

“…Static determination of the amplifiers

V_{normalG 1}

and

V_{normalG 2}

levels to maintain a constant quiescent current over

V_{normalD}

resulted in a shaping function that improves linearity without reducing efficiency [22]. The statically determined shaping function, though better than a static gate supply, only improves linearity for select values of

{\overset{false¯}{P}}_{normalout}

.…”

Section: Measurement Methods and Gate Shaping Function Optimisationmentioning

confidence: 99%

“…If for static measurements the amplifier is biased with varying drain and gate voltages to maintain a static quiescent current, the gain variation over

V_{normalD}

is reduced. While under static operation constant quiescent current operation seems ideal, the amplifier behaves differently under dynamic operation, as shown in [22]. In this work, the amplifier performance under dynamic SM is improved with a different gate bias shaping function, determined by optimisation routines based on dynamic measurements.…”

Section: Amplifier and Dsmmentioning

confidence: 98%

“…Static measurements for

V_{normalD} = 10

–20 V, show a 6 dB variation in small‐signal gain. Under dynamic operation, the gain reduction increases, dropping the gain to zero for low‐input drive power levels [22]. This is a known phenomenon in GaN, especially pronounced in this non‐commercial process [25].…”

Section: Amplifier and Dsmmentioning

confidence: 99%

See 3 more Smart Citations

Efficiency and linearity enhancement of a two‐stage X‐band PA through simultaneous gate and drain supply modulation

Duffy

Lasser

Cappello

et al. 2020

IET Microwaves, Antennas & Propagation

Self Cite

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Section: Introductionsupporting

confidence: 54%

“…Static determination of the amplifiers

V_{normalG 1}

and

V_{normalG 2}

levels to maintain a constant quiescent current over

V_{normalD}

{\overset{false¯}{P}}_{normalout}

.…”

Section: Measurement Methods and Gate Shaping Function Optimisationmentioning

confidence: 99%

“…If for static measurements the amplifier is biased with varying drain and gate voltages to maintain a static quiescent current, the gain variation over

V_{normalD}

Section: Amplifier and Dsmmentioning

confidence: 98%

“…Static measurements for

V_{normalD} = 10

Section: Amplifier and Dsmmentioning

confidence: 99%

See 2 more Smart Citations

Efficiency and linearity enhancement of a two‐stage X‐band PA through simultaneous gate and drain supply modulation

Duffy

Lasser

Cappello

et al. 2020

IET Microwaves, Antennas & Propagation

Self Cite

View full text Add to dashboard Cite

“…To address this issue, specific back-off efficiency enhancement techniques have been proposed and developed over the years. These techniques, such as load modulation [8][9][10][11][12] and supply modulation, [13][14][15][16] have shown great potential for improving efficiency in OBO. It is sometimes the case that these techniques are both applied to the same PA, such as in.…”

mentioning

confidence: 99%

Analysis of the impact of prototyping‐related parasitic effects in a hybridGaNpower amplifier for5G FR1applications

Bartolotti,

Zhang,

Shi

et al. 2023

Int J Numerical Modelling

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This article analyses the impact of parasitic effects encountered in the manufacturing of a Gallium Nitride power amplifier optimized for a specific trade‐off of efficiency and linearity at 5G FR1 frequencies. The analysis focuses on an example based on a packaged transistor and implemented in hybrid technology, adopting a two‐layer printed circuit board for passive distributed elements and surface‐mount lumped components. The design is summarized, and the focus is then posed on the comparison of simulated and measured results, the main causes of inaccuracy in their agreement, and a simple way of reproducing these in simulation. The mechanical stability of the assembly and the sensitivity of the second harmonic control are identified as the main sources of performance degradation. These effects are correctly modeled at the simulation level thanks to the insertion of specific parasitic lumped elements but could not be fully eliminated at the experimental level in this specific prototype. However, post‐tuning performed on the prototype, guided by the proposed analysis, still allows to reach satisfactory performance although somewhat sub‐optimal compared to the one expected from simulations. At 3.5 GHz, the re‐tuned PA demonstrates a measured output power in excess of 37.5 dBm at saturation, with associated gain higher than 14 dB and PAE of 60%. In a 2‐tone test with 20 MHz spacing, the IMD3 remains lower than −30 dBc up to 29 dBm of output power with a corresponding PAE of the order of 32%.

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Dual Gate and Drain Supply Modulation of an X-Band PA

Cited by 2 publications

References 14 publications

Efficiency and linearity enhancement of a two‐stage X‐band PA through simultaneous gate and drain supply modulation

Efficiency and linearity enhancement of a two‐stage X‐band PA through simultaneous gate and drain supply modulation

Analysis of the impact of prototyping‐related parasitic effects in a hybridGaNpower amplifier for5G FR1applications

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