2022
DOI: 10.1016/j.apcatb.2021.120904
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Dual optimization approach to Mo single atom dispersed g-C3N4 photocatalyst: Morphology and defect evolution

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Cited by 283 publications
(87 citation statements)
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“…33,[168][169][170][171][172] In particular, the solvothermal method is feasible to fabricate some potential substrates such as MOFs, TiO 2 , and g-C 3 N 4 to anchor SAs for photocatalytic and electrocatalytic reactions. 168,173,174 For instance, Wang et al have developed a high-loading dual-single-atom (DSA)/TiO 2 NS photocatalyst (Fig. 4a) by a solvothermal method, which exhibited high photocatalytic activity/durability for water splitting.…”
Section: Unique Fabrication Routes Of Sacs For Photocatalytic and Pho...mentioning
confidence: 99%
“…33,[168][169][170][171][172] In particular, the solvothermal method is feasible to fabricate some potential substrates such as MOFs, TiO 2 , and g-C 3 N 4 to anchor SAs for photocatalytic and electrocatalytic reactions. 168,173,174 For instance, Wang et al have developed a high-loading dual-single-atom (DSA)/TiO 2 NS photocatalyst (Fig. 4a) by a solvothermal method, which exhibited high photocatalytic activity/durability for water splitting.…”
Section: Unique Fabrication Routes Of Sacs For Photocatalytic and Pho...mentioning
confidence: 99%
“…[ 94 ] Besides OVs, anion vacancies have also been observed in ionic compound‐based semiconductor photocatalysts. For instance, sulfur vacancies for ZnS, [ 95 ] Zn x Cd 1− x S, [ 96 ] and CuIn 5 S 8 , [ 15 ] nitrogen vacancies for Ta 3 N 5 , [ 97 ] and covalent compounds such as g‐C 3 N 4 which both contain nitrogen vacancies and carbon vacancies, [ 98 ] have all been recently reported. Importantly, the density and nature of these vacancies can be tuned by varying the synthesis conditions.…”
Section: Experimental Strategies For Co2 Photoreduction To Ch4mentioning
confidence: 99%
“…The atom trapping method is another effective strategy to synthesize the SACs with stably anchored SAs ( Wang et al., 2018 ). Specifically, to plant SAs in the commonly used semiconductors materials, constructing surface defect sites (i.e., C-defect ( Chen et al., 2020c ; Liu et al., 2021a ), O-defect ( Cai et al., 2020 ; Wang et al., 2021e ), N-defect ( Qin et al., 2021 ; Zhang et al., 2022a ), S-defect ( Wang et al., 2020b ; Zhang et al., 2021e ), metal-defect ( Wu et al., 2021 ; Zhang et al., 2018 ), etc.) can efficiently capture the SAs.…”
Section: The Synthesis Strategies Of Sapmentioning
confidence: 99%
“…Besides affecting the photocatalysts' light-harvesting and charge transfer capability, it is demonstrated that the introduced SAs could also act as the reaction active sites and directly participate in the reaction ( Liu et al., 2021a ; Wang et al., 2021b ). Compared with general metal nanoparticle/semiconductor catalysts, the SAPs, maximizing the atomic utilization, exhibit boosted reaction active sites and consequent excellent photocatalytic performance ( Figures 8 A and 8B) ( Jiao et al., 2021 ; Wang et al., 2019e ; Zhang et al., 2022a ). It is generally considered that the surface reaction process is strongly influenced by the geometric effect and the electronic structure of the catalysts ( Gao et al., 2020a ).…”
Section: Current Research Progress On Sapsmentioning
confidence: 99%