Ductile-regime turning mechanism of single-crystal silicon

Shibata, Takayuki; Fujii, Shigeru; Makino, Eiji; Ikeda, Masayuki

doi:10.1016/0141-6359(95)00054-2

Cited by 155 publications

(85 citation statements)

References 8 publications

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“…On the contrary, larger shear plane angle is witnessed while cutting silicon on the (111) crystal plane, manifesting higher machinability which confirms that (111)< 0> crystal setup is the easy cutting direction, in agreement with the experimental results [21][22]. …”

Section: Variation Of Forces and Associates Parameters Exerted By Thesupporting

confidence: 81%

An atomistic simulation investigation on chip related phenomena in nanometric cutting of single crystal silicon at elevated temperatures

Chavoshi

Luo

2016

Computational Materials Science

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This version is available at https://strathprints.strath.ac.uk/55554/ Strathprints is designed to allow users to access the research output of the University of Strathclyde. Unless otherwise explicitly stated on the manuscript, Copyright © and Moral Rights for the papers on this site are retained by the individual authors and/or other copyright owners. Please check the manuscript for details of any other licences that may have been applied. You may not engage in further distribution of the material for any profitmaking activities or any commercial gain. You may freely distribute both the url (https://strathprints.strath.ac.uk/) and the content of this paper for research or private study, educational, or not-for-profit purposes without prior permission or charge.Any correspondence concerning this service should be sent to the Strathprints administrator: strathprints@strath.ac.ukThe Strathprints institutional repository (https://strathprints.strath.ac.uk) is a digital archive of University of Strathclyde research outputs. It has been developed to disseminate open access research outputs, expose data about those outputs, and enable the management and persistent access to Strathclyde's intellectual output. AbstractNanometric cutting of single crystal silicon on the different crystal orientations and at a wide range of temperatures (300 K-1500 K) was studied through molecular dynamics (MD) simulations using two sorts of interatomic potentials, an analytical bond order potential (ABOP) and a modified version of Tersoff potential, so as to explore the cutting chip characteristics and chip formation mechanisms. Smaller released thermal energy and larger values of chip ratio (ratio of the uncut chip thickness to the cut chip thickness) as well as shear plane angle were obtained when cutting was performed at higher temperatures or on the (111) crystal plane, implying an enhancement in machinability of silicon. Nonetheless, the subsurface deformation depth was observed to become deeper under the aforementioned conditions. Further analysis revealed a higher number of atoms in the chip when cutting was implemented on the (110) crystal plane, attributable to the lower position of the stagnation region which triggered less ploughing action of the tool on the silicon substrate. Regardless of temperature of the substrate the minimum chip velocity angle was found while cutting the (111) crystal plane of silicon substrate whereas the maximum chip velocity angle appeared on the (110) surface. A discrepancy between the two potential functions in predicting the chip 2 velocity angle was observed at high temperature of 1500 K, resulting from the overestimated phase instability and entirely molten temperatures of silicon by the ABOP potential. Another key observation was that the resultant force exerted by the rake face of the tool on the chip was found to decrease by 24 % when cutting silicon on the (111) surface at 1173 K compared to that at room temperature. Besides, smaller resultant force, friction coefficient at the tool/chip in...

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Section: Variation Of Forces and Associates Parameters Exerted By Thesupporting

confidence: 81%

An atomistic simulation investigation on chip related phenomena in nanometric cutting of single crystal silicon at elevated temperatures

Chavoshi

Luo

2016

Computational Materials Science

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“…Figure 13a shows the simulation results which were obtained by post-processing of the MD trajectories using the dislocation extraction algorithm (DXA). It was anticipated that dislocation nucleation might occur during the process of nanometric cutting [41], but no dislocations were found to travel ahead of the tool that will drive plasticity in silicon (this is possible due to scale limitations of the MD) since experimental studies reported presence of several type of dislocations in contrast to what is observed here [51,52]. Careful examination of the simulation video showed some ¼<111> partial dislocations in the sub-surface and not in the cutting zone.…”

Section: Structural Transformations and Mechanism Of Ductility In Silmentioning

confidence: 42%

Influence of microstructure on the cutting behaviour of silicon

et al. 2016

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General rights Copyright for the publications made accessible via the Queen's University Belfast Research Portal is retained by the author(s) and / or other copyright owners and it is a condition of accessing these publications that users recognise and abide by the legal requirements associated with these rights. Abstract:We use molecular dynamics simulation to study the mechanisms of plasticity during cutting of monocrystalline and polycrystalline silicon. Three scenarios are considered: (i) cutting a single crystal silicon workpiece with a single crystal diamond tool, (ii) cutting a polysilicon workpiece with a single crystal diamond tool, and (iii) cutting a single crystal silicon workpiece with a polycrystalline diamond tool. A long-range analytical bond order potential is used in the simulations, providing a more accurate picture of the atomic-scale mechanisms of brittle fracture, ductile plasticity, and structural changes in silicon. The MD simulation results show a unique phenomenon of brittle cracking typically inclined at an angle of 45° to 55° to the cut surface, leading to the formation of periodic arrays of nanogrooves in monocrystalline silicon, which is a new insight into previously published results. Furthermore, during cutting, silicon is found to undergo solid-state directional amorphisation without prior Si-I to Si-II (beta tin) transformation, which is in direct contrast to many previously published MD studies on this topic. Our simulations also predict that the propensity for amorphisation is significantly higher in single crystal silicon than in polysilicon, signifying that grain boundaries eases the material removal process.

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“…al. observed the same pitting damage when turning silicon and qualitatively explained the direction-dependent damage effects by the use of a slip model [8]. Recent studies have shown that silicon transforms to a metallic phase (␤-tin) under the compressive loading of the cutting tool [9,10].…”

Section: Introductionmentioning

confidence: 78%

On the effect of crystallographic orientation on ductile material removal in silicon

O’Connor

Marsh

Couey

2005

Precision Engineering

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In this work the critical chip thickness for ductile regime machining of monocrystalline, electronic-grade silicon is measured as a function of crystallographic orientation on the (0 0 1) cubic face. A single-point diamond flycutting setup allows sub-micrometer, non-overlapping cuts in any direction while minimizing tool track length and sensitivity to workpiece flatness. Cutting tests are performed using chemically faceted, −45 • rake angle diamond tools at cutting speeds of 1400 and 5600 mm/s. Inspection of the machined silicon workpiece using optical microscopy allows calculation of the critical chip thickness as a function of crystallographic orientation for different cutting conditions and workpiece orientations. Results show that the critical chip thickness in silicon for ductile material removal reaches a maximum of 120 nm in the [1 0 0] direction and a minimum of 40 nm in the [1 1 0] direction. These results agree with the more qualitative results of many previous efforts.

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Ductile-regime turning mechanism of single-crystal silicon

Cited by 155 publications

References 8 publications

An atomistic simulation investigation on chip related phenomena in nanometric cutting of single crystal silicon at elevated temperatures

An atomistic simulation investigation on chip related phenomena in nanometric cutting of single crystal silicon at elevated temperatures

Influence of microstructure on the cutting behaviour of silicon

On the effect of crystallographic orientation on ductile material removal in silicon

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