Dynamic global model of oxide Czochralski process with weighing control

Mamedov, V. M.; Vasiliev, M.G.; Yuferev, V. S.

doi:10.1016/j.jcrysgro.2010.11.108

Cited by 4 publications

(1 citation statement)

References 19 publications

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“…As melt growth equipment and experimentation become more and more expensive, and many difficulties are involved in experimental measurement, numerical simulation is becoming more and more important to help us to obtain detailed information about heat flux, and related properties in the furnace, as well as to provide a design and optimization basis. Large amounts of work have been carried out to investigate the melt flow, heat and mass transfer, radiation, interface inversion and process control during the last few decades . The thermal stress analysis in CZ crystal growth has also been investigated by many researchers .…”

Section: Introductionmentioning

confidence: 99%

Global heat loss and thermal stress analysis in Czochralski crystal growth

Liu

Wang

et al. 2014

Crystal Research and Technology

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Based on our invention of an energy-efficient Czochalski crystal growth furnace, a 2D-axisymmetric numerical simulation model of LiNbO 3 crystal growth is developed. The heat transfer, melt and gas flow, radiation and the interface deflection have been examined. Heat losses in the furnace and the insulator, as well as the heating power and thermal stress distribution at three stages of crystal growth are calculated in detail. It is found that a large proportion of heat dissipates through the water-cooling system, and at the steel shell of the furnace, gas convection heat transfer is the major cooling mechanism. Less heat dissipation by radiation and more heat flux by gas convection to the crystal sidewall results in a larger concentrated thermal stress, which may induce large crystal cracks in the growth process. The simulation results of heating power are in coincidence with the actual power of our furnace, which verifies the feasibility of our model. The detailed information with respect to the device obtained from simulation can help to optimize the energy-saving design and growth process.

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Section: Introductionmentioning

confidence: 99%