Dynamic stressing of thin oxides

Fong, Y.; Chen, I.C.; Holland, S.; Lee, J.; Hu, Chenming

doi:10.1109/iedm.1986.191279

Cited by 50 publications

(20 citation statements)

References 11 publications

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“…Lifetime under pulse bias increases with increase in frequency. These results confii the results from earlier studies [2,3]. However, the most important feature to be noted is that the difference in lifetime between dc and pulse stress conditions diminishes with decrease in electric field.…”

Section: Resultssupporting

confidence: 55%

Time-dependent dielectric breakdown of intrinsic SiO/sub 2/ films under dynamic stress

Chaparala

Suehle²,

Messick³

et al.

IEEE 1995 International Integrated Reliability Workshop. Final Report

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We present time-dependent dielectric breakdown (TDDB) characteristics for 9, 15, and 22 nm silicon dioxide films stressed under dc, unipolar, and bipolar pulsed bias conditions. Our results indicate that the increased lifetime observed under pulsed stress conditions diminishes as the stress electric field and oxide thickness are reduced. TDDB data under pulse bias conditions exhibit similar field and temperature dependencies as under static stress. C-V measurements indicate that lifetime enhancement only occurs for electric fields and thickness where charge trapping is sislllficant. have shown in our earlier work [4] on intrinsic thin oxides stressed under dc bias that it is essential to test the oxides over a wide range of electric fields and temperatures to obtain correct electric field, temperature dependencies, and the physical model to estimate the reliability under operating conditions.The purpose of this work is to report electric field, temperature, frequency, and thickness dependencies of TDDB under dynamic stress over a wide range of electric fields, temperatures, and frequencies. In this paper, for the first time, we present data comparing acceleration factors under static and dynamic stress conditions for intrinsic thin oxides.

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Section: Resultssupporting

confidence: 55%

Time-dependent dielectric breakdown of intrinsic SiO/sub 2/ films under dynamic stress

Chaparala

Suehle²,

Messick³

et al.

IEEE 1995 International Integrated Reliability Workshop. Final Report

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“…Above 10 kHz, the bipolar and unipolar lifetimes are fairly constant and a time constant of about 0.2 ms appears to be associated with this saturation phenomenon, at least at the electric field used during this experiment. The appearance of a time constant suggests that under ac conditions the hole concentration cannot reach its steady-state dc value [5]. Our results show that field reversal is even more effective than just turning the signal OFF in extending t,,.…”

Section: Bpolar Stressingmentioning

confidence: 73%

“…1 show a small increase in t,, with increasing frequency or just the usual t,, scatter. However, a previous study [5] did conclude that in the dc to 10-kHz range there was a small ( x 2 -~4 ) increase in t,, with increasing frequency. Our data indicate that at high frequencies this factor does not increase further.…”

Section: Unipolar Stressingmentioning

confidence: 87%

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High-frequency time-dependent breakdown of SiO/sub 2/

Rosenbaum

1991

IEEE Electron Device Lett.

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Time-dependent dielectric breakdown (TDDB) of thin oxides (8.6-11 nm) is compared under dc, pulse, and bipolar pulse conditions for frequencies up to 4 MHz. Lifetime under unipolar pulse conditions does not deviate largely from that under dc conditions; however, lifetime under bipolar stress conditions increases by a factor of 40 to 100 at frequencies above 10 kHz. The field acceleration of breakdown time is similar for dc and pulse stressing.

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“…For example, studies of SiO 2 reliability have revealed the reduced charge trapping characteristic under ac stress. [1][2][3][4] In addition, high-k materials have been investigated recently as potential alternatives for gate dielectric. HfO 2 seems to be the most promising gate dielectric material for future generation, since it has already shown not only excellent electrical characteristics but also compatibility with CMOS technology.…”

Section: Threshold Voltage Instability Characteristics Under Positivementioning

confidence: 99%

Threshold voltage instability characteristics under positive dynamic stress in ultrathin HfO2 metal-oxide-semiconductor field-effect transistors

Rhee

Kang

et al. 2004

Applied Physics Letters

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Articles you may be interested inInvestigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO2 structure using fast I-V measurement Appl. Phys. Lett.Abnormal threshold voltage shift under hot carrier stress in Ti1−xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors Abnormal interface state generation under positive bias stress in TiN/HfO2 p-channel metal-oxide-semiconductor field effect transistors

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Dynamic stressing of thin oxides

Cited by 50 publications

References 11 publications

Time-dependent dielectric breakdown of intrinsic SiO/sub 2/ films under dynamic stress

Time-dependent dielectric breakdown of intrinsic SiO/sub 2/ films under dynamic stress

High-frequency time-dependent breakdown of SiO/sub 2/

Threshold voltage instability characteristics under positive dynamic stress in ultrathin HfO2 metal-oxide-semiconductor field-effect transistors

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