Dynamics of ferroelectric domain growth in the field of atomic force microscope

Agronin, A.; Molotskii, M.; Rosenwaks, Y.; Rosenman, G.; Rodriguez, Brian J.; Kingon, A. I.; Gruverman, Alexei

doi:10.1063/1.2197264

Cited by 92 publications

(62 citation statements)

References 32 publications

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“…We studied polarization reversal under the action of the electric field produced by conductive tip of scanning probe microscope (SPM) 16,17 . Similar SPM tip-induced polarization reversal process has been explored in different materials by multiple groups worldwide [17][18][19][20][21][22][23] . These studies provide detailed information on mechanisms and kinetics of polarization reversal process induced by the SPM tip, including shape and sizes of the formed domains 17,18,20,21,24 , kinetics of the switching and relaxation [25][26][27] , and the role of the external conditions on these processes 22,28 .…”

Section: Resultsmentioning

confidence: 99%

Ionic field effect and memristive phenomena in single-point ferroelectric domain switching

et al. 2014

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Electric field-induced polarization switching underpins most functional applications of ferroelectric materials in information technology, materials science and optoelectronics. Recently, much attention has been focused on the switching of individual domains using scanning probe microscopy. The classical picture of tip-induced switching, including formation of cylindrical domains with size, is largely determined by the field distribution and domain wall motion kinetics. The polarization screening is recognized as a necessary precondition to the stability of ferroelectric phase; however, screening processes are generally considered to be uniformly efficient and not leading to changes in switching behaviour. Here we demonstrate that single-point tip-induced polarization switching can give rise to a surprisingly broad range of domain morphologies, including radial and angular instabilities. These behaviours are traced to the surface screening charge dynamics, which in some cases can even give rise to anomalous switching against the electric field (ionic field effect).

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Section: Resultsmentioning

confidence: 99%

Ionic field effect and memristive phenomena in single-point ferroelectric domain switching

et al. 2014

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“…Isolated wedge-shaped domains are formed under the charged SPM probe which then grow through the uniaxial ferroelectric of nano-, micro-or millimeter thickness acquiring an almost cylindrical shape or a slightly truncated cone [7,8,9,10] or long needles [11,12,13,14]. Note, that from one to three orders of magnitude increase of the bulk conductivity along the atrificially produced charged domain wall has been measured in single crystal of ferroelectric-semiconductor SbSJ [12].…”

Section: Introductionmentioning

confidence: 99%

Static conductivity of charged domain walls in uniaxial ferroelectric semiconductors

Eliseev

Morozovska²,

Svechnikov³

et al. 2011

Phys. Rev. B

234

201

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Using Landau-Ginzburg-Devonshire theory we calculated numerically the static conductivity of charged domain walls with different incline angle with respect to spontaneous polarization vector in the uniaxial ferroelectrics-semiconductors of n-type. We used the effective mass approximation for the electron and holes density of states, which is valid at arbitrary distance from the domain wall.Due to the electrons accumulation, the static conductivity drastically increases at the inclined head-to-head wall by 1 order of magnitude for small incline angles θ~π/40 by up 3 orders of magnitude for the perpendicular domain wall (θ=π/2).There are space charge regions around the charged domain walls, but the quantitative characteristics of the regions (width and distribution of the carriers) appeared very different for the tail-to-tail and head-to-head walls in the considered donor doped ferroelectric semiconductor.The head-to-head wall is surrounded by the space charge layer with accumulated electrons and depleted donors of the same thickness (~40−100 correlation lengths). The tail-to-tail wall is surrounded by the thin space charge layer with accumulated holes of thickness ~5-10 correlation lengths and thick layer with accumulated donors of thickness ~100−200 correlation lengths, as well as the layer with depleted by electrons of thickness ~100−200 correlation lengths.* Corresponding author, e-mail: morozo@i.com.ua † Corresponding author, e-mail: vladimir.shur@usu.ru 2 The conductivity across the tail-to-tail wall is at least an order of magnitude smaller than the one of the head-to-head wall due to the low mobility of holes, which are improper carries.The results are in qualitative agreement with recent experimental data for LiNbO 3 doped with MgO.

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“…In epitaxial thin films and crystals, the domain size typically varies linearly with the applied voltage and logarithmically with time. 4 Two main theoretical models have been proposed to explain the mechanism of lateral domain growth. The first one invokes a thermal activation type of wall motion with an exponential field (E) dependence of the wall velocity,…”

Section: Imaging Of Ferroelectric Domains: Statics and Dynamicsmentioning

confidence: 99%

Piezoresponse Force Microscopy: A Window into Electromechanical Behavior at the Nanoscale

Bonnell¹,

Kalinin²,

Kholkin³

et al. 2009

MRS Bull.

Self Cite

195

133

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Piezoresponse force microscopy (PFM) is a powerful method widely used for nanoscale studies of the electromechanical coupling effect in various materials systems. Here, we review recent progress in this field that demonstrates great potential of PFM for the investigation of static and dynamic properties of ferroelectric domains, nanofabrication and lithography, local functional control, and structural imaging in a variety of inorganic and organic materials, including piezoelectrics, semiconductors, polymers, biomolecules, and biological systems. Future pathways for PFM application in high-density data storage, nanofabrication, and spectroscopy are discussed. AbstractPiezoresponse force microscopy (PFM) is a powerful method widely used for nanoscale studies of the electromechanical coupling effect in various materials systems. Here, we review recent progress in this field that demonstrates great potential of PFM for the investigation of static and dynamic properties of ferroelectric domains, nanofabrication and lithography, local functional control, and structural imaging in a variety of inorganic and organic materials, including piezoelectrics, semiconductors, polymers, biomolecules, and biological systems. Future pathways for PFM application in high-density data storage, nanofabrication, and spectroscopy are discussed.

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Dynamics of ferroelectric domain growth in the field of atomic force microscope

Cited by 92 publications

References 32 publications

Ionic field effect and memristive phenomena in single-point ferroelectric domain switching

Ionic field effect and memristive phenomena in single-point ferroelectric domain switching

Static conductivity of charged domain walls in uniaxial ferroelectric semiconductors

Piezoresponse Force Microscopy: A Window into Electromechanical Behavior at the Nanoscale

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