E‐band Indium Phosphide double heterojunction bipolar transistor monolithic microwave‐integrated circuit power amplifier based on stacked transistors

Squartecchia, Michele; Johansen, Tom K.; Dupuy, J.-Y.; Nodjiadjim, Virginie; Midili, Virginio; Riet, M.; Konczykowska, A.

doi:10.1002/mop.31558

Cited by 3 publications

(3 citation statements)

References 11 publications

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“…Researchers worldwide have extensively investigated RF PA design in the field of satellite communication [20,21]. Common PA-design models include microwave tubes, semiconductor devices, and integrated circuits [22][23][24][25][26][27]. While microwave-tube PAs offer good linearity and stability, they are larger, consume more power, and incur higher maintenance costs [28,29].…”

Section: Introductionmentioning

confidence: 99%

Catalyzing satellite communication: A 20W Ku-Band RF front-end power amplifier design and deployment

Chen,

Wang,

Zhang

et al. 2024

PLoS ONE

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This paper presents a groundbreaking Ku-band 20W RF front-end power amplifier (PA), designed to address numerous challenges encountered by satellite communication systems, including those pertaining to stability, linearity, cost, and size. The manuscript commences with an exhaustive discussion of system design and operational principles, emphasizing the intricacies of low-noise amplification, and incorporating key considerations such as noise factors, stability analysis, gain, and gain flatness. Subsequently, an in-depth study is conducted on various components of the RF chain, including the pre-amplification module, driver-amplification module, and final-stage amplification module. The holistic design extends to the inclusion of the display and control unit, featuring the power-control module, monitoring module, and overall layout design of the PA. It is meticulously tailored to meet the specific demands of satellite communication. Following this, a thorough exploration of electromagnetic simulation and measurement results ensues, providing validation for the precision and reliability of the proposed design. Finally, the feasibility of that design is substantiated through systematic system design, prototype production, and exhaustive experimental testing. It is noteworthy that, in the space-simulation environmental test, emphasis is placed on the excellent performance of the Star Ku-band PA within the 13.75GHz to 14.5GHz frequency range. Detailed power scan measurements reveal a P1dB of 43dBm, maintaining output power flatness < ± 0.5dBm across the entire frequency and temperature spectrum. Third-order intermodulation scan measurements indicate a third-order intermodulation of ≤ -23dBc. Detailed results of power monitoring demonstrate a range from +18dBm to +54dBm. Scans of spurious suppression and harmonic suppression, meanwhile, show that the PA evinces spurious suppression ≤ -65dBc and harmonic suppression ≤ -60dBc. Rigorous phase-scan measurements exhibit a phase-shift adjustment range of 0° to 360°, with a step of 5.625°, and a phase-shift accuracy of 0.5dB. Detailed data from gain-scan measurements show a gain-adjustment range of 0dB to 30dB, with a gain flatness of ± 0.5dB. Attenuation error is ≤ 1%. These test parameters perfectly align with the practical application requirements of the technical specifications. When compared to existing Ku-band PAs, our design reflects a deeper consideration of specific requirements in satellite communication, ensuring its outstanding performance and uniqueness. This PA features good stability, high linearity, low cost, and compact modularity, ensuring continuous and stable power output. These features position the proposed system as a leader within the market. Successful orbital deployment not only validates its operational stability; it also makes a significant contribution to the advancement of China’s satellite PA technology, generating positive socio-economic benefits.

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Section: Introductionmentioning

confidence: 99%

Catalyzing satellite communication: A 20W Ku-Band RF front-end power amplifier design and deployment

Chen,

Wang,

Zhang

et al. 2024

PLoS ONE

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“…Nowadays, heterojunction bipolar transistors (HBTs) with high-performance are widely used in largescale integrated circuits [1][2][3]. In high performance and reliability circuit/system design, accurate HBTs models play an important role [4,5].…”

Section: Introductionmentioning

confidence: 99%

Analytical Neuro-space Mapping Technology for Heterojunction Bipolar Transistors Modeling

Yan,

Li,

et al. 2023

PIER M

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An analytical modeling method for heterojunction bipolar transistor (HBT) is proposed in this paper. The new neuro-space mapping (Neuro-SM) model applied to DC, small signals and large signals simultaneously consists of two mapping networks, which provide the additional degrees of freedom. Sensitivity analysis expressions are derived to accelerate the training process. When the nonlinearity of device is high, or the response of the model is complex, the weights in the proposed model are automatically adjusted to address the accuracy limitations. The proposed modeling method is verified by measured HBT examples in DC, small signals and large signals Harmonic Balance (HB) simulation. The modeling experiments of the measured HBT demonstrate that the errors of the proposed Neuro-SM model are less than 2% by matching combined DC, small-signal S-parameters and large-signal HB data, which are less than the errors of the traditional Neuro-SM model and the coarse model. The proposed analytic Neuro-SM model fits the response of the fine model well.

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“…[3][4][5] Nowadays, devices are operating at higher and higher frequencies, and heterojunction bipolar transistors (HBTs) have the advantages of short transition time, high-cutoff frequency, and large current gain. Therefore, HBTs have been more widely used, [6][7][8][9] showing good prospects for applications in large-scale integrated circuits, fiber optic communication, and power sensors. Meanwhile, HBT is also an indispensable element in microwave monolithic integrated circuits (MMICs), and the most important issue in MMIC design is the accurate modeling of HBTs.…”

Section: Introductionmentioning

confidence: 99%

Modeling of heterojunction bipolar transistors based on novel Wiener‐type dynamic neural network

Han

Tan

Liu

et al. 2022

Int J RF Mic Comp-Aid Eng

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A novel Wiener-type dynamic neural network modeling method for heterojunction bipolar transistors (HBTs) is proposed in this article. The model structure of the novel Wiener-type dynamic neural network applicable to HBT modeling is determined by the vector fitting. For the novel Wiener-type dynamic neural network structure, we also proposed a training algorithm applicable to this novel structure to improve its accuracy. We considered the transmission characteristics of the HBT and use the H-parameter to replace the Y-parameter for small-signal analysis. The DC and small-signal model formulas for HBT are also derived. The proposed novel Wiener-type dynamic neural network modeling method does not require detailed parameter information and the internal design structure of the HBT and can model any type of HBT as long as accurate training data are available. In this paper, an application example on modeling a 3 Â 30μm 2 InGaP/GaAs HBT is presented, and a combined DC and small-signal model is established to demonstrate the accuracy and feasibility of the proposed novel Wiener-type dynamic neural network modeling method. The modeling method can also be used for computeraided design, and the established models can be more easily applied to circuit simulation.

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E‐band Indium Phosphide double heterojunction bipolar transistor monolithic microwave‐integrated circuit power amplifier based on stacked transistors

Cited by 3 publications

References 11 publications

Catalyzing satellite communication: A 20W Ku-Band RF front-end power amplifier design and deployment

Catalyzing satellite communication: A 20W Ku-Band RF front-end power amplifier design and deployment

Analytical Neuro-space Mapping Technology for Heterojunction Bipolar Transistors Modeling

Modeling of heterojunction bipolar transistors based on novel Wiener‐type dynamic neural network

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