2013
DOI: 10.1021/nl304528j
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E1(A) Electronic Band Gap in Wurtzite InAs Nanowires Studied by Resonant Raman Scattering

Abstract: We report on resonant Raman experiments carried out on wurtzite InAs nanowires. Resonant conditions have been obtained by tuning either the excitation energy or the band gap through external high pressure at fixed excitation energy. A complete azimuthal study of the Raman spectra with two laser excitation lines (2.41 and 1.92 eV) has also been performed on a single wire. The measured E2(H) mode resonance indicates that the E1(A) gap is about 2.4 eV, which is considerably reduced with respect to the zinc-blende… Show more

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Cited by 32 publications
(55 citation statements)
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“…Whereas, most III–V's except some nitrides show cubic structure in bulk form. However, NW of III–V's like GaAs and InAs stabilizes in pure WZ and ZB and mixed phases depending on growth conditions . Volker et al have reported that the bulk energy per atom pair for ZB phase is lower than WZ bulk energy; therefore, the stable phase is ZB in bulk material in this case .…”
Section: Resultsmentioning
confidence: 90%
“…Whereas, most III–V's except some nitrides show cubic structure in bulk form. However, NW of III–V's like GaAs and InAs stabilizes in pure WZ and ZB and mixed phases depending on growth conditions . Volker et al have reported that the bulk energy per atom pair for ZB phase is lower than WZ bulk energy; therefore, the stable phase is ZB in bulk material in this case .…”
Section: Resultsmentioning
confidence: 90%
“…When pressure tuned band gaps are close to the laser light energies, “forbidden” LO and even higher order LO modes can be observed. In our experiments, we observed and analyzed not only the resonant enhancement of TO and LO intensities as recently reported for ZB GaAs NW10 and WZ InAs NW28 under pressure, but also the relative intensities of LO and 2LO modes with respect to the increase of the TO mode at resonances, as shown in Fig. 1.…”
mentioning
confidence: 66%
“…It is hoped that the present study will simulate the further investigations on WZ-InAs and its potential applications. [38], b [15], c [17], d [22], e [23], g [21], h [10], i [24], k [25] …”
Section: Discussionmentioning
confidence: 99%
“…presents the calculated lattice parameters, electronic band gap and transverse effective charge together with the available experimental[10,[21][22][23][24][25] and other theoretical…”
mentioning
confidence: 99%