Early morphological changes on Si(111) surfaces during UHV processing

Abstract

Articles you may be interested inElectronic structure, surface morphology, and topologically protected surface states of Sb2Te3 thin films grown on Si(111) J. Appl. Phys. 113, 053706 (2013); 10.1063/1.4789353 Morphology and bonding states of chemical vapor deposition diamond films nucleation surfaceThe evolution of the morphology of vicinal Si͑111͒ surfaces during UHV annealing was followed in details for two types of surface regions: ͑a͒ general flat areas of the surface and ͑b͒ near the edges of patterned structures such as craters and mesas. The measured surface roughness first increases through an Ostwald ripening process and then approaches that of an atomically flat surface. The morphologies that develop close to the boundaries of etched craters are initially similar to those predicted by the continuum theory of local surface transport, but, as the surface roughness decreases, facets replace the rounded corners. The ridges that develop around isolated craters persist during UHV annealing as long as continuous step flow due to evaporation is taking place.