EBSD Investigation of Cu-Sn IMC Microstructural Evolution in Cu/Sn-Ag/Cu Microbumps During Isothermal Annealing

Wang, S. J.; Hsu, L.H.; Wang, N. K.; Ho, Cheng–En

doi:10.1007/s11664-013-2675-z

Cited by 41 publications

(12 citation statements)

References 14 publications

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“…With dwell time increasing, the Cu 6 Sn 5 grains disappeared gradually, and the residual Cu 6 Sn 5 phase surrounding the coarse Cu 3 Sn phase still remained in Fig in the discrete IPF of Cu 3 Sn IMC means no certain grain orientation preference that can be manifested in the Cu 3 Sn IMC growth process even after dwelling for 70 mins, as has been reported elsewhere [19].…”

Section: Ebsd Analysis Of Cu/imcs/cu Interconnectionsupporting

confidence: 74%

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Microstructural and mechanical analysis on Cu–Sn intermetallic micro-joints under isothermal condition

Chen

et al. 2015

Intermetallics

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Citation: MO, L. et al., 2015 Meanwhile, some equiaxial ultra-fine grains accompanied with the Kirkendall voids, were found only in adjacent to the electroplated copper. In addition, a specific type of micropillar with the size ~5μm×5μm×12μm fabricated by focus ion beam (FIB) was used to carry out the mechanical testing by Nano-indentation, which confirmed that this type of joint is mechanically robust, regardless of its porous Cu 3 Sn IMC interconnection.

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Section: Ebsd Analysis Of Cu/imcs/cu Interconnectionsupporting

confidence: 74%

“…As the IMCs formed under high temperature with a long dwell time, thus both the Cu 6 Sn 5 and Cu 3 Sn are hexagonal structure [19,20]. To facilitate the EBSD characterization, the Orientation Imaging Microscopy (OIM) software was utilized to collect the data with a 30 KV beam.…”

Section: Phase Identification and Ebsd Analysis Of Imcsmentioning

confidence: 99%

Microstructural and mechanical analysis on Cu–Sn intermetallic micro-joints under isothermal condition

Chen

et al. 2015

Intermetallics

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“…In addition from the slope of the same function of X versus t′ 1/2 plot (Fig.7b) the value of K can also be determined and it is K = 840 nm 2 /h. For the interpretation of the growth of the average composition near to the substrate in Cu, first we mention that in general diffusion along different grain boundaries can have important effects [12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28] on the overall intermixing process between two pure films. These processes can be well characterized by a bimodal GB network, with different (fast and slow) diffusivities.…”

Section: Discussionmentioning

confidence: 99%

“…The formation and growth of intermetallic compounds of Cu-Sn have been extensively studied [4][5][6][7][8][9][10][11][12][13]. In the pioneering works of Tu and his coworkers [3,14,15] the most important conclusions, obtained in thin film systems with Sn and Cu thicknesses in the range of 180-2500 nm, were as follows: i) The reaction between the Cu and Sn started spontaneously during the deposition at room temperature and led to the formation of Cu 6 Sn 5 phase.…”

Section: Introductionmentioning

confidence: 99%

Formation of Cu6Sn5 phase by cold homogenization in nanocrystalline Cu–Sn bilayers at room temperature

Zaka

Shenouda

Fouad

et al. 2016

Microelectronics Reliability

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a b s t r a c tSolid state reaction between nanocrystalline Cu and Sn films was investigated at room temperature by depth profiling with secondary neutral mass spectrometry and by X-ray diffraction. A rapid diffusion intermixing was observed leading to the formation of homogeneous Cu 6 Sn 5 layer. There is no indication of the appearance of the Cu 3 Sn phase. This offers a way for solid phase soldering at low temperatures, i.e. to produce homogeneous Cu 6 Sn 5 intermediate layer of several tens of nanometers during reasonable time (in the order of hours or less). From the detailed analysis of the growth of the planar reaction layer, formed at the initial interface in Sn(100 nm)/Cu(50 nm) system, the value of the parabolic growth rate coefficient at room temperature is 2.3 × 10 −15 cm 2 /s. In addition, the overall increase of the composition near to the substrate inside the Cu film was interpreted by grain boundary diffusion induced solid state reaction: the new phase formed along the grain boundaries and grew perpendicular to the boundary planes. From the initial slope of the composition versus time function, the interface velocity during this reaction was estimated to be about 0.5 nm/h.

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“…Zhang et al 10 claimed that the Cu 3 Sn grain had a preferred orientation along (100) being parallel to the Cu substrate after annealing. Wang et al 11 suggested that a Cu 3 Sn grain may possess uniform grain boundary energy. Furthermore, Chen et al 12 direction on the anode.…”

Section: Introductionmentioning

confidence: 99%

Crystallographic Orientation Effect on Electromigration in Ni-Sn Microbump

Huang

Chen

Chakroborty

et al. 2017

JOM

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EBSD Investigation of Cu-Sn IMC Microstructural Evolution in Cu/Sn-Ag/Cu Microbumps During Isothermal Annealing

Cited by 41 publications

References 14 publications

Microstructural and mechanical analysis on Cu–Sn intermetallic micro-joints under isothermal condition

Microstructural and mechanical analysis on Cu–Sn intermetallic micro-joints under isothermal condition

Formation of Cu6Sn5 phase by cold homogenization in nanocrystalline Cu–Sn bilayers at room temperature

Crystallographic Orientation Effect on Electromigration in Ni-Sn Microbump

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