Edge misfit dislocations in the GeSi/Si(001) pair: Conditions and specific features of high-quantity generation

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Edge misfit dislocations in the GeSi/Si(001) pair: Conditions and specific features of high-quantity generation

Cited by 4 publications

References 25 publications

Mechanism of induced nucleation of misfit dislocations in the Ge-on-Si(0 0 1) system and its role in the formation of the core structure of edge misfit dislocations

Mechanism of induced nucleation of misfit dislocations in the Ge-on-Si(0 0 1) system and its role in the formation of the core structure of edge misfit dislocations

Effect of thermal annealing on the interface quality of Ge/Si heterostructures

Experimental observation of nucleation of misfit dislocations induced by the stress field of primary dislocations

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