2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) 2020
DOI: 10.1109/wipdaasia49671.2020.9360283
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Edge Termination Structures for 3.3 kV 4H-SiC Devices

Bi-Fan Dong
1
,
Kung‐Yen Lee
2
,
Yun-Kai Lai
3
et al.
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