Educational Virtual Instrumentation Application for System Identification

Yadav²,

Singh³

2011

IJCNS

To design a Double-Pole Four-Throw (DP4T) RF switch, measurement of device parameters is required. In this DP4T RF switch CMOS is a unit cell, so with a thin oxide layer of thickness 628 Å which is measured optically. Some of the material parameters were found by the curve drawn between Capacitance versus Voltage (C-V) and Capacitance versus Frequency (C-F) with the application of Visual Engineering Environment Programming (VEE Pro). To perform the measurement processing at a distance, from the hazardous room, we use VEE Pro software. In this research, to acquire a fine result for RF MOSFET, we vary the voltage with minor increments and perform the measurements by vary the applying voltage from +5 V to -5 V and then back to +5 V again and then save this result in a data sheet with respect to temperature, voltage and frequency using this program. We have investigated the characteristics of RF MOSFET, which will be used for the wireless telecommunication systems.

Section: E4980a Precision L-c-r Metermentioning

confidence: 99%

Measurement Process of MOSFET Device Parameters with VEE Pro Software for DP4T RF Switch

Yadav²,

Singh³

2011

IJCNS

“…Although the LCR meter does not have all the sophisticated features as impedance analyzers, the LCR meter offers excellent performance at an affordable cost [6].…”

Section: Calculation Of Oxide Thickness By L-c-r Metermentioning

confidence: 99%

Measurement of Oxide Thickness for MOS Devices, Using Simulation of SUPREM Simulator

Singh²,

Yadav³

2010

IJCA

A procedure to characterize oxide thickness and conductor layers that are grown or deposited on semiconductor is by studying the characteristics of a MOS capacitor that is formed of the conductor -insulator -semiconductor layers. For a capacitor formed with oxide thickness of 510 Å (measured optically), here in this research author measures the oxide thickness by the SUPREM Simulator. Its accuracy depends on the quality of models, parameters and numerical techniques it employ. Authors also verify the result by measurment of capacitance at different voltages using LCR meter and the curve drawn through Visual Engineering Environment Programming (VEE Pro) software. Based on the oxide thickness measurement of a MOS capacitor, one can measure the device parameters, mainly the substrate dopant concentration and other parameter. This research was completed in BEL Laboratory.

“…It has the properties of wide selection of frequency range from few Hz to 3 GHz, frequency list sweep for continuous testing at multiple frequency points used for general purpose testing of surface-mount components, leaded components, materials, general purpose interface bus (GPIB) and handler interface for easy test automation in production environment with 0.05% basic accuracy. By this device we can measure the parameters as impedance (Z), admittance (Y), θ, resistance (R), Inductance (L), capacitance (C), transconductance (X), magnetc field ( B), quality factor (Q), DC resistance (R dc ), DC currnt (I dc ), DC voltage (V dc ) [6,7].…”

Section: Introductionmentioning

confidence: 99%

Characterization Process of MOSFET with Virtual Instrumentation for DP4T RF Switch – A Review

Yadav²,

Singh³

2011

WSN

With the increasing interest in radio frequency switch by using the CMOS circuit technology for the wireless communication systems is in demand. A traditional n-MOS Single-Pole Double-Throw (SPDT) switch has good performances but only for a single operating frequency. For multiple operating frequencies, to transmitting or receiving information through the multiple antennas systems, known as MIMO system, a new RF switch is required which should be capable of operating with multiple antennas and frequencies as well as minimizing signal distortions and power consumption. We already have proposed a Double-Pole Four-Throw (DP4T) RF switch and in this research article we are discussing a process for the characterization of the MOSFET with Virtual Instrumentation. The procedure to characterize oxide and conductor layers that are grown or deposited on semiconductors is by studying the characteristics of a MOS capacitor that is formed of the conductor (Metal)-insulator-semiconductor layers for the purpose of RF CMOS as a switch is presented. For a capacitor formed of Metal-silicon dioxide-silicon layers with a thick oxide measured optically. Some of the calculated material parameters are away from the expected values. These errors might be due to several factors such as a possible offset capacitance of the probes due to improper contact with the wafer which is measured by using the LCR (Inductance-Capacitance-Resistance) meter with the help of Visual Engineering Environment Programming (VEE Pro, a Agilent product).