2011
DOI: 10.15625/0868-3166/21/3/170
|View full text |Cite
|
Sign up to set email alerts
|

Effect from Doping of Quantum Wells on Enhancement of The Mobility Limited by One-Interface Roughness Scattering

Abstract: We present a theoretical study of the effect from doping of quantum wells (QWs) on enhancement of the mobility limited by one-interface roughness scattering. Within the variational approach, we introduce the enhancement factor defined by the ratio of the overall mobility in symmetric two-side doped square QWs to that in the asymmetric one-side counterpart under the same doping and interface profiles. The enhancement is fixed by the sample parameters such as well width, sheet carrier density, and correlation le… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 1 publication
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?