Effect of an Electromagnetic Wave Absorber on 300-GHz Short-Range Wireless Communications

Lee, Sangyeop; Fujita, Mitsue; Toyoda, Masayuki; Hara, Shinsuke; Amakawa, Shuhei; Yoshida, Takeshi; Fujishima, Minoru

doi:10.1109/rfit49453.2020.9226230

Cited by 1 publication

(1 citation statement)

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“…Instead, the cubic mixer with frequency conversion function is adopted to realize the shift of the frequency spectrum, which in turn leads to lower output power and shorter wireless transmission distance. They have further developed a variety of more integrated communication systems along this harmonic mixing idea, and they have been at the international leading level in the field of silicon‐based THz integrated wireless communication [ 132–136 ] . In addition, Nippon Telegraph and Telephone Corporation (NTT) and Tokyo Institute of Technology have also developed a variety of communication systems that can support high‐order modulations with a working frequency around 300 GHz [ 137–145 ] .…”

Section: Silicon‐based Communication Systemmentioning

confidence: 99%

Research on Silicon‐Based Terahertz Communication Integrated Circuits

Zhou

CHEN

Tang

et al. 2022

Chinese J of Electronics

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With the increasing number of users and emerging new applications, the demand for mobile data traffic is growing rapidly. The limited spectrum resources of the traditional microwave and millimeter-wave frequency bands can no longer support the future wireless communication systems with higher system capacity and data throughput. The terahertz (THz) frequency bands have abundant spectrum resources, which can provide sufficient bandwidth to expand channel capacity and increase transmission data rate. In addition, with the rapid development of silicon-based semiconductor technology, its characteristic size keeps decreasing, and the radio frequency performance of active devices is gradually approaching the performance of III-V semiconductor technology. The realization of THz communication systems based on low-cost, high-stability, and easy-to-integrate silicon-based process has become a feasible solution. This review summarizes the reported silicon-based THz communication systems, as well as the key sub-circuit chips in these systems, including the local oscillator, power amplifier, low noise amplifier, on-chip antenna and transceiver chip, etc.

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Section: Silicon‐based Communication Systemmentioning

confidence: 99%