Extended Abstracts of the 1988 International Conference on Solid State Devices and Materials 1988
DOI: 10.7567/ssdm.1988.d-2-1
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Effect of Bias Sputtering on W and W-Al Schottky Contact Formation and Its Application to GaAs MESFETs

Abstract: I{e investigated the effect of DC bias on the sputter-deposition of I{ and I{-Al on the GaAs substrates. By applying a negative bias to the substrate, we found that the concentration of impurities in the netal and at the interface were reduced, and the characteristics of the Schottlcy contact were improved with respect to the barrier height, the n-value and tire uniforrnity, which was due to the reverse sputtering effect on the substrate. This technique was applied to the gate formation of GaAs MESFEIs, and th… Show more

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