Effect of catalyst nanoparticle size on growth direction and morphology of InN nanowires

Ji, Xu; Cheng, Shuang; Hu, Hairong; Li, Huajun; Wu, Zhiguo; Yan, Pengxun

doi:10.1063/1.4729916

Cited by 9 publications

(8 citation statements)

References 32 publications

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“…5(e). In fact, similar corrugated growth patterns were also observed in 1D wurtzite stacked-cone and zigzag InN, 36,37 AlN, 38 GaN (ref. 39) and ZnO (ref.…”

Section: Resultssupporting

confidence: 69%

“…From these crystallographic analyses, by using WinX-morph Software [35] on the basis of the above relation, it can be determined that the side facets of InN nanonecklace are { } 1 1 10 planes. In fact, similar corrugated growth patterns were also observed in 1D wurtzite stacked-cone and zigzag InN [36][37] , AlN [38] , GaN [39] and ZnO [40] nanostructures. 5 (e).…”

Section: Resultssupporting

confidence: 68%

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Synthesis, microstructure, growth mechanism and photoluminescence of high quality [0001]-oriented InN nanowires and nanonecklaces

et al. 2015

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Novel indium nitride (InN) based nanomaterial is important for high speed electronics and infrared optoelectronics. In this paper, high quality Indium nitride (InN) nanostructures including nanowires and nanonecklaces, have been grown on one substrate by chemical vapor deposition. The morphologies and microstructures of InN nanowires and nanonecklaces were characterized, which confirmed their chemical composition as well as single crystallinity. The InN nanonecklaces consist of multiple beads composed of two equilateral truncated hexagonal cones faceted with { } 1 1 10 and { } 1 1 10 planes. The growth mechanism of the InN nanonecklace was studied and a three-step process was suggested for the growth. Finally, room temperature photoluminescence spectra of the two nanostructures showed the near band edge emissions of around 0.73 eV, where the emission from nanonecklace was found to be stronger, indicating the promise for near-infrared optoelectronics applications.Group III nitride semiconductors are extensively studied materials in the last two decades for broad technologies ranging from light emitters to fast electronics. Among them, much effort was dedicated to the study of InN for its distinguished physical and chemical properties [1][2][3][4][5] , especially the high electrical conductivity and electron mobility. These merits may lead to potential applications in high speed electronic devices, terahertz spectroscopy [6] , biosensors [7] , solar cells [8] , Fig. 5 TEM and HRTEM images of the InN nanowire and InN nanonecklace. (a) TEM image of an individual nanowire, (b) The corresponding HRTEM image and SAED pattern of the nanowire. (c) TEM image of an individual nanonecklace, (d) The corresponding HRTEM image and FFT pattern of the nanonecklace. (e) Space-filling model of ideal [0001] nanonecklace and schematic representation of Miller indexing of the various faces of crystal (left) and the corresponding crystal unit of the InN nanonecklace (right).Moreover, it should be noted that the above theoretical analysis is based on stoichiometric and ideal slow growth condition. In reality, the growth is also subject to other factors. In the case here, the In/N source ratio would render drastically different growth patterns like nanowires/nanonecklace. This phenomenon is commonly occurred in nanomaterial growth. For example, one CVD growth can yield six different morphologies in Gallium Sulfide structures [41] .Here the detailed theoretical analysis beyond BFDH method is not conducted, since this report is mainly focused on the experiment growth demonstration of peculiar InN nanostructures. 1 1 10 planes possess finite charges and dipole moments, they will give a rise to inversely positive and negative electrostatic surface energy. To keep the overall structure stable, the total surface free energy including the electrostatic surface energy and the surface

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“…5(e). In fact, similar corrugated growth patterns were also observed in 1D wurtzite stacked-cone and zigzag InN, 36,37 AlN, 38 GaN (ref. 39) and ZnO (ref.…”

Section: Resultssupporting

confidence: 69%

Section: Resultssupporting

confidence: 68%

Synthesis, microstructure, growth mechanism and photoluminescence of high quality [0001]-oriented InN nanowires and nanonecklaces

et al. 2015

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“…41 Similar crystalline plane evolution has also been observed in a variety of hexagonal semiconductors such as AlN, ZnO and InN. 49–51 As an example, Fig. S5c and d† show the HRTEM images of the defect-free crystal domain and stacking fault region.…”

Section: Resultssupporting

confidence: 61%

Homoepitaxial growth of high-quality GaN nanoarrays for enhanced UV luminescence

Liu

Yang

et al. 2022

CrystEngComm

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“…In other words, the as-obtained nano-necklace (see Figs 1 and 4c ) are not exactly the same as simulated Fig. 4e ; instead, the planes are more favored than the ones, which is due to the different formation energies thus different diffusion abilities of the adatoms on these two types of side-surfaces 22 . In addition, similar multi-beads morphologies are also observed in one dimensional hexagonal wurtzite stacked-cone and zigzag AlN 23 , GaN 24 and ZnO 25 nanostructures.…”

Section: Resultsmentioning

confidence: 77%

Terahertz detectors arrays based on orderly aligned InN nanowires

Chen

Liu

et al. 2015

Sci Rep

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Nanostructured terahertz detectors employing a single semiconducting nanowire or graphene sheet have recently generated considerable interest as an alternative to existing THz technologies, for their merit on the ease of fabrication and above-room-temperature operation. However, the lack of alignment in nanostructure device hindered their potential toward practical applications. The present work reports ordered terahertz detectors arrays based on neatly aligned InN nanowires. The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a “transfer-printing” method. Field effect transistors on aligned nanowires were fabricated and tested for terahertz detection purpose. The detector showed good photoresponse as well as low noise level. Besides, dense arrays of such detectors were also fabricated, which rendered a peak responsivity of 1.1 V/W from 7 detectors connected in series.

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Effect of catalyst nanoparticle size on growth direction and morphology of InN nanowires

Cited by 9 publications

References 32 publications

Synthesis, microstructure, growth mechanism and photoluminescence of high quality [0001]-oriented InN nanowires and nanonecklaces

Synthesis, microstructure, growth mechanism and photoluminescence of high quality [0001]-oriented InN nanowires and nanonecklaces

Homoepitaxial growth of high-quality GaN nanoarrays for enhanced UV luminescence

Terahertz detectors arrays based on orderly aligned InN nanowires

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