Effect of Concentration on the Optical and Solid State Properties of CoO Thin Films Deposited Using the Aqueous Chemical Growth (ACG) Method

Abstract

Thin films of Cobalt(II) Oxide were deposited from equimolar concentrations of Cobalt Chloride, and Hexamethylenetetramine on clean glass substrates using the Aqueous Chemical Growth method in order to determine the effect of precursor concentration on their optical and solid state properties. The analytical tools used for the study include, Rutherford Back Scattering (RBS) spectroscopy for elemental analysis and determination of film thickness, X-Ray Difftraction (XRD) for crystallographic structure, a UV-VIS spectrophotometer for optical and other solid state properties and a photomicroscope for photomicrographs. The results indicate that an increase in the concentration of precursor materials makes ACG CoO thin film a better absorber of ultraviolet radiation, a better transmitter of infra-red radiation, a reflector of visible radiation and a material having an increased band gap. The ACG CoO thin film deposited from 0.1 M precursor concentration was found to be a suitable material for the construction of thermographic devices, poultry houses etc. It can also serve as window layer in solar cells among other optoelectronic applications.