Effect of copper doping on kinetic phenomena in n-Bi2Te2.85Se0.15

Zhitinskaya, M. K.; Немов, С. А.; Svechnikova, T. E.

doi:10.1134/s1063782607100028

Cited by 5 publications

(8 citation statements)

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“…15 were relatively stable at elevated temperatures and over time comparable with those of Cu 0.01 Bi 2 Te 2.85 Se 0. 15 .…”

supporting

confidence: 56%

“…15 were relatively stable at elevated temperatures and over time comparable with those of Cu 0.01 Bi 2 Te 2.85 Se 0. 15 . This indicated that an optimal Cu-doping concentration is required to stabilize the thermoelectric properties of Bi 2 Te 2.85 Se 0.15 prepared by the current LPG process.…”

supporting

confidence: 56%

“…Figure 3 shows (a) the absolute value of the Seebeck coefficient |S|, (b) the electrical resistivity q, and (c) the power factor S 2 /q near 310 K of Cu x Bi 2 Te 2.85 Se 0. 15 behavior of |S| supported a change in carrier concentration. That is, |S| decreased with increasing x and showed a gradual change for x > 0.015.…”

Section: Thermoelectric Propertiesmentioning

confidence: 78%

“…14 However, it has been pointed out that the thermoelectric properties of these materials decline with age owing to the high diffusivity of Cu atoms. 15,16 This effect results in an unstable thermoelectric performance of the materials, which is an unfavorable property for practical application.…”

Section: Introductionmentioning

confidence: 98%

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Thermoelectric Properties of Cu-Doped n-Type Bi2Te2.85Se0.15 Prepared by Liquid Phase Growth Using a Sliding Boat

Kitagawa

Matsuura

Kato

et al. 2014

Journal of Elec Materi

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N-type Bi 2 Te 2.85 Se 0.15 thermoelectric materials were prepared by liquid phase growth (LPG) using a sliding boat, a simple and short fabrication process for Bi 2 Te 3 -related materials. Cu was selected as a donor dopant, and its effect on thermoelectric properties was investigated. Thick sheets and bars of Cu x Bi 2 Te 2.85 Se 0.15 (x = 0-0.25) of 1-2 mm in thickness were obtained using the process. X-ray diffraction patterns and scanning electron micrographs showed that the in-plane direction tended to correspond to the hexagonal c-plane, which is the preferred direction for thermoelectric conversion. Cu-doping was effective in controlling conduction type and carrier (electron) concentration. The conduction type was p-type for undoped Bi 2 Te 2.85 Se 0.15 and became n-type after Cu-doping. The Hall carrier concentration was increased by Cu-doping. Small resistivity was achieved in Cu 0.02 Bi 2 Te 2.85 Se 0.15 owing to an optimized amount of Cu-doping and high crystal orientation. As a result, the maximum power factor near 310 K for Cu 0.02 Bi 2 Te 2.85 Se 0.15 was approximately 4 9 10 À3 W/K 2 m and had good reproducibility. Furthermore, the thermal stability of Cu 0.02 Bi 2 Te 2.85 Se 0.15 was also confirmed by thermal cycling measurements of electrical resistivity. Thus, n-type Bi 2 Te 2.85 Se 0.15 with a large power factor was prepared using the present LPG process.

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“…15 were relatively stable at elevated temperatures and over time comparable with those of Cu 0.01 Bi 2 Te 2.85 Se 0. 15 .…”

supporting

confidence: 56%

supporting

confidence: 56%

Section: Thermoelectric Propertiesmentioning

confidence: 78%

Section: Introductionmentioning

confidence: 98%

See 2 more Smart Citations

Thermoelectric Properties of Cu-Doped n-Type Bi2Te2.85Se0.15 Prepared by Liquid Phase Growth Using a Sliding Boat

Kitagawa

Matsuura

Kato

et al. 2014

Journal of Elec Materi

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“…In this study, we reduced the hole concentration by introducing a copper impurity, since we expected that copper would have a profound donor effect, trans forming to a positively charged ion during doping [5].…”

Section: Introductionmentioning

confidence: 99%

Effect of copper doping on kinetic coefficients and their anisotropy in PbSb2Te4

et al. 2012

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In anisotropic PbSb 2 Te 4 and PbSb 2 Te 4 :Cu single crystals, nine main independent components of the Hall, electrical conductivity, thermopower, and Nernst-Ettingshausen effects and their anisotropy in the range 77-450 K have been studied. PbSb 2 Te 4 single crystals exhibit a high hole concentration (p ≈ 3 × 10 20 cm -3 ). Copper exhibits a donor effect and significantly (approximately by a factor of 2) reduces the hole concentration in PbSb 2 Te 4 . The temperature dependences of the kinetic coefficients, except for the Hall effect, have a form typical of the one band model. The significant anisotropy of the Hall coefficient R 123 /R 321 ≈ 2 at low temperatures corresponds to the multi ellipsoid model of the energy spectrum of holes in PbSb 2 Te 4 . An important feature of the data on transport phenomena is the high thermopower anisotropy (ΔS ≈ 60-75 μV/K) in the mixed conductivity region caused by the mixed scattering mechanism. Data on the anisot ropy of the transverse Nernst-Ettingshausen effect confirm the mixed mechanism of hole scattering; in the cleavage plane, scattering at acoustic phonons dominates, while in the trigonal axis direction, impurity scat tering appears significant. Doping with copper enhances the role of impurity scattering in the direction of the trigonal axis c 3 ; as a result, two components of the Nernst-Ettingshausen tensor Q 321 and Q 132 in the PbSb 2 Te 4 :Cu single crystal are positive at low temperatures, whereas, in the undoped crystal, only the Q 321 component is positive.

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Effect of temperature and doping with Cu on the reflectance spectra of PbSb2Te4 crystals

Немов

Ulashkevich

2017

Semiconductors

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Effect of copper doping on kinetic phenomena in n-Bi2Te2.85Se0.15

Cited by 5 publications

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Thermoelectric Properties of Cu-Doped n-Type Bi2Te2.85Se0.15 Prepared by Liquid Phase Growth Using a Sliding Boat

Thermoelectric Properties of Cu-Doped n-Type Bi2Te2.85Se0.15 Prepared by Liquid Phase Growth Using a Sliding Boat

Effect of copper doping on kinetic coefficients and their anisotropy in PbSb2Te4

Effect of temperature and doping with Cu on the reflectance spectra of PbSb2Te4 crystals

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