Effect of CVD parameters on large area growth of highly crystalline MoS2 thin flakes

Abstract

In this study, we presented a report on effect of growth parameters (seeding promoter, growth temperature, Ar gas flow rate) on the formation of MoS2 monolayer. The morphology and structure of as-grown MoS2 were investigated in detail by optical microscopy, atomic force microscopy, Raman and photoluminesence spectroscopy techniques. The results showed that a highly reproducible growth of dense MoS2 triangular flakes with the size of ~35 µm over large area (~1.5x1 cm2) can be obtained by using a optimized parameters. The MoS2 field effect transistors based on the as-grown MoS2 exhibited carrier mobility of 0.5–2 cm2V−1s−1 and On/Off ratio of ~104. Our results can provide a useful information to realize large area, high quality of MoS2 for real electronic applications.