Effect of deposition parameters on structural, optical and electrical properties of nanocrystalline ZnSe thin films

Study of optical properties of thermally evaporated ZnSe thin films annealed at different pulsed laser powers

“…can be ascribed to (220) and (311) lattice planes, which is in good agreement with findings in Ref. [8,9]. Sometimes, the hexagonal wurtzite structure, cubic structure, and a mixture of the two phases have been observed for the ZnSe films prepared by different methods [19][20][21][22][23].…”

“…The binary ZnSe system is one of the most famous monochalcogenides due to its direct energy gap in the visible region. Zinc Selenide is used as a window layer in the fabrication of thin-film solar cells, in heterojunction formed with some narrow band-gap semiconductor [9][10][11]. It is mainly used as protective and antireflection coating for infrared (IR) operating electrochromic thermal-control surface devices.…”

Novel reduced toxic route synthesis and characterization of chemical bath deposited ZnSe thin films

“…Among the various alternatives such as ZnO, ZnS, ZnSe, In 2 S 3 and InSe [9][10][11][12][13], the wide band gap materials like zinc sulphide (ZnS) with a band gap energy of 3.7 eV and zinc selenide (ZnSe) with band gap energy of 2.7 eV are the best candidates since they are economically priced and create low conduction band offsets [3,6,14]. Additionally these materials are most appropriate for their use in photoluminescent, electroluminescent devices and in short wavelength emitting diodes due to their wide band gap energy [15][16][17].…”

Effect of thermal annealing on the physical properties of Zn1−x Cu x Se thin films deposited by close spaced sublimation technique

“…ZnSe can be prepared in both n-and p-type forms [1] . It has unique physical properties, such as wide optical energy band gap (∼2.7 eV) [2] , high refractive index, low optical absorption in the visible and infrared spectral region. ZnSe films have several potential applications in electrooptics devices [3−5] .…”