Effect of Direct Nitridation of 4H-SiC Surface on MOS Interface States

Abstract

A nitride layer was formed on a SiC surface by direct nitridation in pure N2 or in NH3 diluted with N2. The SiO2 layer was deposited by the thermal decomposition of tetraethylorthosilicate (TEOS) on the nitride layer to form an MIS diode. The XPS analysis showed that the nitride layer was oxidized during the deposition process of SiO2. The direct nitridation was effective to reduce the interface state density between the insulating layer and 4H-SiC

Bow Free 4'' Diameter 3C-SiC Epilayers Formed upon Wafer-Bonded Si/SiC Substrates

“…Nagasawa et al 8 and Bakovski et al 28 calculated D it from sub-threshold MOS characteristics with values ranging from 5 × 10 12 -1 × 10 13 cm −2 eV −1 . Our D it value is comparable to that measured by Sakai et al, 29 which was based on state of the art dry oxidation and subsequent nitridation treatment typically deployed for 4H-SiC MOSFET technology.…”

Plasma Nitridation of 4H-SiC by Glow Discharge of N₂/H₂ Mixed Gases

“…al. [4]. The effective attenuation length of the photoelectron was assumed to be 2.5 nm in the surface nitride layer [3].…”

Preparation and Characterization of Deposited Tetraethylorthosilicate-SiO₂/SiC MIS Structure

“…It had been shown in our previous report that the direct nitridation layer was not so stable and disappeared after the deposition of SiO2 [4]. The deposition of SiO2 was carried out at 750°C and it took about 30 min to obtain the deposition temperature of 750°C after setting the sample in the deposition chamber.…”

“…We have tried to use nitride layer as the insulating layer of SiC MIS devices [2,3,4]. It has been difficult to get the nitride layer thicker than several nm by direct nitridation method.…”