Effect of doping concentration on the structural, morphological and optical properties of Ca-doped PbS thin films grown by CBD

Yücel, Ersin; Yücel, Yasin

doi:10.1016/j.ijleo.2017.04.104

Cited by 45 publications

(22 citation statements)

References 19 publications

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“…This may be related to the e®ect of several parameters like structural disorder, lattice parameters, crystal size, quantum con¯nement e®ect and lattice strain. 32 As observed from XRD results ( Table 2), with addition of Sn, the crystallite size value decreases from 48.8 nm to 43.7 nm and the bandgap of the samples increases from 2.63 eV to 2.76 eV. These results are in good agreement with the quantum con¯nement e®ect theory in nanocrystallinē lms.…”

Section: Urbach Energy Optical Energy Gap and Refractive Indexsupporting

confidence: 85%

PROPERTIES OF LOW-LEVEL Sn-DOPED In₂S₃FILMS DEPOSITED BY SPRAY PYROLYSIS TECHNIQUE

Bouguila¹,

Kraini²,

Koaib³

et al. 2019

Surf. Rev. Lett.

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Tin-doped indium sulfide films were grown on glass substrates by spray pyrolysis technique at low different Sn:In atomic ratio in the starting solution and optimum experiment conditions ([Formula: see text]C, S:[Formula: see text]). The tin to indium molar ratio Sn:In was varied from 0 to [Formula: see text] in the solution. The obtained films with 2[Formula: see text][Formula: see text]m of thickness, are perfectly adhered, homogenous and uniform on the substrates. X-ray diffraction study reveals that all the films are formed in [Formula: see text] phase grown preferentially along (400). These films lose the orientation with increasing tin doping level. The crystallite size of undoped film was 48.8[Formula: see text]nm, which increases to 59.2[Formula: see text]nm corresponding to the film grown with Sn:[Formula: see text]. Raman analysis shows different peaks related to In2S3 phase. Optical analysis shows that these films are transparent in the visible and near IR with a transmittance higher than 85%. The optical gap energy is found to be direct and varies from 2.61[Formula: see text]eV to 2.76[Formula: see text]eV with the increase of Sn:In ratio from 0 to [Formula: see text]. The films are [Formula: see text] type and Sn doping improves considerably their conductivity. The photoluminescence behavior of In2S3:Sn films was also studied.

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Section: Urbach Energy Optical Energy Gap and Refractive Indexsupporting

confidence: 85%

PROPERTIES OF LOW-LEVEL Sn-DOPED In₂S₃FILMS DEPOSITED BY SPRAY PYROLYSIS TECHNIQUE

Bouguila¹,

Kraini²,

Koaib³

et al. 2019

Surf. Rev. Lett.

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“…Such changes in lm morphology with alloying have been previously observed. 40,41 Film thickness was measured by prolometry to be 190 AE 16 nm, independent of Sn content. To address the possibility of phase segregation of 1 and CsSn II Br 3 at the nanoscale, energy-dispersive X-ray spectroscopy (EDX) elemental mapping (Fig.…”

Section: Film Imagingmentioning

confidence: 99%

Tuning the bandgap of Cs₂AgBiBr₆ through dilute tin alloying

et al. 2019

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“…Экспериментальные точки образуют достаточно протяженный линейный участок, экстраполяция которого на ось абсцисс позволяет определить ширину запрещенной зоны, которая при комнатной температуре составила E g = 0.40 ± 0.01 эВ для нелегированной пленки PbS и E g = 0.38 ± 0.01 эВ для пленки, содержащей кальций. Отметим, что в работе [27], в которой также исследовались пленки сульфида свинца, легированного кальцием, приводится существенно большее значение ширины запрещенной зоны. Это может быть связано с более высоким уровнем легирования по сравнению с тем, который был использован в настоящей работе, а также с размерным эффектом [35], поскольку размер кристаллитов в пленках, исследуемых в [27], составлял 11−17 нм, что меньше, чем характерный размер экситона Ванье−Мотта.…”

Section: оптические свойстваunclassified

“…Отметим, что в работе [27], в которой также исследовались пленки сульфида свинца, легированного кальцием, приводится существенно большее значение ширины запрещенной зоны. Это может быть связано с более высоким уровнем легирования по сравнению с тем, который был использован в настоящей работе, а также с размерным эффектом [35], поскольку размер кристаллитов в пленках, исследуемых в [27], составлял 11−17 нм, что меньше, чем характерный размер экситона Ванье−Мотта.…”

Section: оптические свойстваunclassified

“…Например, согласно данным [19], введение ионов Sn, Sb заметно повышает фотоответ слоев сульфида свинца, а добавки Ag, Hg, Cu его уменьшают. Влияние легирования PbS ионами щелочноземельных металлов (Mg 2+ , Ca 2+ , Sr 2+ ) на морфологию и оптические свойства пленок PbS рассмотрено в [25][26][27]. Однако авторами работ не было исследовано воздействие легирования на их полупроводниковые и фотоэлектрические свойства.…”

Section: Introductionunclassified

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Структурные, оптические и фоточувствительные свойства пленок PbS, осажденных в присутствии CaCl-=SUB=-2-=/SUB=-

Маскаева¹,

Mostovshchikova²,

Марков³

et al. 2019

Физика И Техника Полупроводников

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Polycrystalline lead-sulfide (PbS) films doped with calcium are synthesized on sitall and glass substrates by chemical bath deposition with the use of thiocarbamide and a CaCl_2 additive at concentrations of up to 5 mM. Introduction of the CaCl_2 additive into the reaction solution greatly prolongs the induction period of the process of synthesis. The thicknesses of the PbS and PbS(Ca) films are, correspondingly, 200 and 150 nm at an average crystallite dimension of ~100 nm. The maximum calcium content in the films is 0.06 at % for layers on sitall substrates and 0.11 at % for layers on glass substrates. Doping with calcium does not influence the crystal structure of lead sulfide (the cubic B 1 structure, space group Fm 3 $$\bar {m}$$ ) but brings about an increase in the crystal-lattice period from a = 0.59343(2) nm to a = 0.59413(1) nm, an increase in microstrains, and partial ordering of the crystallites forming the film. Upon the introduction of calcium, the band gap decreases from E _ g = 0.40 eV at 295 K (0.38 eV at 90 K) to E _ g = 0.38 eV (0.37 eV). The introduction of up to 5 mM of CaCl_2 into the reaction mixture increases the voltage–power sensitivity of the films by a factor of ~1.7, which is attributed to oxygen-containing compounds formed in the films as a result of the increase in the induction period of the process of synthesis.

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Effect of doping concentration on the structural, morphological and optical properties of Ca-doped PbS thin films grown by CBD

Cited by 45 publications

References 19 publications

PROPERTIES OF LOW-LEVEL Sn-DOPED In₂S₃FILMS DEPOSITED BY SPRAY PYROLYSIS TECHNIQUE

PROPERTIES OF LOW-LEVEL Sn-DOPED In₂S₃FILMS DEPOSITED BY SPRAY PYROLYSIS TECHNIQUE

Tuning the bandgap of Cs₂AgBiBr₆ through dilute tin alloying

Структурные, оптические и фоточувствительные свойства пленок PbS, осажденных в присутствии CaCl-=SUB=-2-=/SUB=-

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Effect of doping concentration on the structural, morphological and optical properties of Ca-doped PbS thin films grown by CBD

Cited by 45 publications

References 19 publications

PROPERTIES OF LOW-LEVEL Sn-DOPED In2S3FILMS DEPOSITED BY SPRAY PYROLYSIS TECHNIQUE

PROPERTIES OF LOW-LEVEL Sn-DOPED In2S3FILMS DEPOSITED BY SPRAY PYROLYSIS TECHNIQUE

Tuning the bandgap of Cs2AgBiBr6 through dilute tin alloying

Структурные, оптические и фоточувствительные свойства пленок PbS, осажденных в присутствии CaCl-=SUB=-2-=/SUB=-

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PROPERTIES OF LOW-LEVEL Sn-DOPED In₂S₃FILMS DEPOSITED BY SPRAY PYROLYSIS TECHNIQUE

PROPERTIES OF LOW-LEVEL Sn-DOPED In₂S₃FILMS DEPOSITED BY SPRAY PYROLYSIS TECHNIQUE

Tuning the bandgap of Cs₂AgBiBr₆ through dilute tin alloying