Effect of doping on the structural, optical and electrical properties of La-doped ZnO thin films

Abdel-Latif, Mahmoud K.; Mobarak, Mohamed; Revaprasadu, Neerish; Ashraf, Abdel Hameed; Othman, Waled; Khalefa, Moatasem Mostafa; Aboud, Ahmed A.; Ismail, Motaz

doi:10.1007/s10854-022-09477-y

Cited by 14 publications

(6 citation statements)

References 83 publications

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“…Figure 1a shows the XRD patterns of all the deposited films on glass slides, pure ZnO and La-doped ZnO (3%, 4% and 5%). All the peak positions matched with previously reported data in the literature [8,9]. It was observed that all the films show crystalline structures attributed to the hexagonal wurtzite ZnO.…”

Section: Structural Propertiessupporting

confidence: 87%

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Lanthanum-Doped Zinc Oxide Thin Films: A Study on Optoelectronic Properties

Tabriz,

Shahzad,

Nadeem

et al. 2024

Cemp 2023

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Section: Structural Propertiessupporting

confidence: 87%

“…Figure 1b shows the peak (100) shifting towards lower 2θ, which indicates the successful integration of La atoms in the ZnO lattice, and La additions did not change the hexagonal structure of the ZnO films. No additional peak confirms that the precursors were completely transformed into the ZnO phase [8].…”

Section: Structural Propertiesmentioning

confidence: 92%

Lanthanum-Doped Zinc Oxide Thin Films: A Study on Optoelectronic Properties

Tabriz,

Shahzad,

Nadeem

et al. 2024

Cemp 2023

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“…The change in the sub-band gap absorption coefficient at the lower-energy part of the spectrum due to doping has been shown in the inset in Figure a, making a comparison between the undoped and the optimally P-doped samples. The Urbach tail slope corresponds to the microstructural defect, where the tail is related to the energy state in the energy gap region created by the localized defects in the material, which eventually controls the band gap . The optical band gap, as estimated from the Tauc’s plot, reduced relatively fast from ∼1.99 to 1.95 eV on increasing dopant flow rate from 0 to 4 sccm, above which it decreased gradually to ∼1.78 eV at 40 sccm of PH 3 flow rate, as revealed in Figure b.…”

Section: Resultsmentioning

confidence: 90%

“…The Urbach tail slope corresponds to the microstructural defect, where the tail is related to the energy state in the energy gap region created by the localized defects in the material, which eventually controls the band gap. 59 The optical band gap, as estimated from the Tauc's plot, reduced relatively fast from ∼1.99 to 1.95 eV on increasing dopant flow rate from 0 to 4 sccm, above which it decreased gradually to ∼1.78 eV at 40 sccm of PH 3 flow rate, as revealed in Figure 9b. The change in the photoluminescence spectrum due to doping has been shown in Figure 9c, for the undoped and two P-doped samples.…”

Section: Optical Band Gap and Photoluminescencementioning

confidence: 83%

Superior Phosphorous Doping in Nanocrystalline Silicon Thin Films and Their Application as Emitter Layers in Silicon Heterojunction Solar Cells

Das

Patra

2023

Energy Fuels

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Phosphorous doping in the nc-Si network induces gradually reduced crystallinity; however, preferential growth along <220>-oriented crystallites promotes the columnar-like growth morphology. At optimum doping, substitution by donor P+-atoms in the c-Si lattice contributes surplus free electrons and high carrier mobility, resulting in superior electrical conductivity in the n-nc-Si network. An elevated doping leads to incorporating elemental P0 atoms in the interstitial position or forming P–Si–H clusters and generating voids between the crystalline columns. Segregation of defects contributes to decreasing carrier mobility and reducing conductivity after diminishing crystallinity and narrowing the optical band gap. By precisely controlling the growth at 250 °C and efficient electrically active doping by P+-atoms, n-nc-Si thin films with superior dark conductivity (∼101 S cm–1) are produced in which the percolation of charge carriers through the crystalline columns could facilitate stacked-layer devices. The optimum n-nc-Si thin films are used as the emitter layers in n-nc-Si/p-c-Si heterojunction solar cells (HJSCs). Furthermore, an ultrathin a-Si:H buffer layer on the p-c-Si minimizes the junction carrier recombination loss, and subsequent postdeposition short-time H-plasma treatment (PSHPT) ensures seeds for superior nanocrystallization in the n-nc-Si emitter layer. The n-nc-Si/(PSHPT)i-nc-Si(buffer layer)/p-c-Si HJSC delivers a PV conversion efficiency, η ∼12.35%, via a reasonable fill factor of ∼0.647 and sensible JSC of ∼32.75 mA cm–2. Further improvement in the PV performance could be possible using suitably thinner p-c-Si wafers, harmonizing with the effective carrier diffusion length, and fabricating a high-quality passivation structure on the backside.

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“…It can be seen that the peak intensity of N-GST is much lower than that of pure GST films after annealing at the same temperature. The grain sizes of GST and N-GST at the different annealing temperatures are calculated using the Scherrer equation, 37 detail results shown in Figure 4d and Supporting Information of Figure S8. Here, the (200) and ( 222) crystal planes were used to calculate their grain sizes.…”

Section: Structure Of the Optical Convolutional Computingmentioning

confidence: 99%

Seven Bit Nonvolatile Electrically Programmable Photonics Based on Phase-Change Materials for Image Recognition

Xia,

Wang,

Wang

et al. 2024

ACS Photonics

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With the rapid development of the Internet of Things, how to efficiently store, transmit, and process massive amounts of data has become a major challenge now. Optical neural networks based on nonvolatile phase change materials (PCMs) have become a breakthrough point due to their zero static power consumption, low thermal crosstalk, large-scale, and high efficiency. However, current photonic devices cannot meet the multilevel requirements in neuromorphic computing due to their limited storage capacity. Here, a new way for increasing storage capacity is paved from the perspective of modulation of the crystallization kinetics of PCMs. A more progressive transition from the amorphous to the crystalline states is achieved through the grain-refinement phenomenon induced by nitrogen (N) element doping in Ge 2 Sb 2 Te 5 (GST), giving precise access to more multibit states. By integrating N-doped Ge 2 Sb 2 Te 5 (N-GST) with a waveguide, a high-capacity nonvolatile photonic device enabling over 7 bits (∼222 levels) storage is achieved for the first time. The storage capacity is increased nearly by 7 times compared to the state-of-the-art device (∼32 levels). An optical convolutional neural network is successfully established for the MINIST handwritten digit recognition task by mapping synapse weight to the multiple optical levels, and a recognition accuracy of up to 96.5% is achieved. Our work provides a new strategy for the development of integrated photonic devices with multilevel and demonstrates enormous application potential in the field of large-scale photonic neural networks.

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Effect of doping on the structural, optical and electrical properties of La-doped ZnO thin films

Cited by 14 publications

References 83 publications

Lanthanum-Doped Zinc Oxide Thin Films: A Study on Optoelectronic Properties

Lanthanum-Doped Zinc Oxide Thin Films: A Study on Optoelectronic Properties

Superior Phosphorous Doping in Nanocrystalline Silicon Thin Films and Their Application as Emitter Layers in Silicon Heterojunction Solar Cells

Seven Bit Nonvolatile Electrically Programmable Photonics Based on Phase-Change Materials for Image Recognition

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