Effect of growth pressure on the characteristics of β-Ga2O3 films grown on GaAs (100) substrates by MOCVD method

Growth Pressure Controlled Nucleation Epitaxy of Pure Phase ε- and β-Ga2O3 Films on Al2O3 via Metal–Organic Chemical Vapor Deposition

“…The atomic planar density difference will induce the anisotropy of the growth rate; the crystal plane with a higher growth rate will appear on the surface as a microstructure. We have confirmed that the pressure can influence the preferred orientation in the growth of β-Ga 2 O 3 film by MOCVD on GaAs substrate . With higher pressure, the growth of highest atomic planar density ε-Ga 2 O 3 (002) is predominant, and then the growth along other orientations is suppressed; in addition the enhanced lateral growth of ε-Ga 2 O 3 (002) under high pressure will flatten the surface just like film grown under 35 mbar.…”

“…The striking changes of the growth rate (at pressure >50 mbar) may be the consequence of parasitic gas-phase reactions of the sources. In the MOCVD growth, parasitic gas-phase reactions will cause nanoparticle formation and deplete the metal organic precursor significantly, and showed nonlinear dependence of solid composition on precursor fluxes. , Moreover, high pressure has a great enhancing effect on the parasitic gas-phase reactions especially when the source is reacting with heavily oxidizing oxygen in the MOCVD growth . The consumption of metal organic precursor by parasitic gas-phase reactions will reduce the growth rate before the deposition of nanoparticle Ga 2 O 3 nuclei (with pressure higher than 100 mbar).…”

Effects of Post Annealing on Electrical Performance of Polycrystalline Ga2O3 Photodetector on Sapphire

“…Lots of researchers have been focused on AlGaN, MgZnO, and Ga 2 O 3 DUV solar-blind photodetectors [2][3][4]. Ga 2 O 3 attracts great attention due to its superior optical properties, chemical stability, and high strength with a bandgap of 4.8 eV, which is a promising material for solar-blind photodetectors [5][6][7][8][9][10][11][12][13]. Ga 2 O 3 thin films have been obtained on foreign substrates by molecular beam epitaxy (MBE) [5,6], radio-frequency magnetron sputtering (RFMS) [7], pulsed laser deposition (PLD) [8,9], atomic layer deposition (ALD) [10], halide vapor phase epitaxy (HVPE) [11], metal-organic chemical vapor deposition (MOCVD) [12], and sol-gel method [13].…”

Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3

“…Several studies have shown that, as well as substrate of sapphire, silicon wafer can be used for Ga2O3 growth. MOCVD is one of effective methods using for deposition of Ga2O3, it's usually chosen for its reproducibility, film adherence [35], scalability into larger commercial systems, and applicability to current device technology [36] [41], while another techniques such as PEALD [42], sputtering [43], [44] also were used for Ga2O3 on silicon. Obtained film quality are varying from amorphous to polycrystalline, depending on growth technique, deposition temperature and post annealing procedure.…”