Effect of Hydrostatic Pressure on the Auger Current Density of InGaN/GaN Multiple Quantum Well Light-emitting Diodes

Abstract

In this study, a numerical model was used to analyze the Auger current in c-plane InGaN/GaN multiple-quantum-well light-emitting diodes (MQWLED) under hydrostatic pressure. Finite difference techniques were employed to acquire energy eigenvalues and their corresponding eigenfunctions of \({\text{InGaN/GaN}}\) MQWLED, and the hole eigenstates were calculated via a 6×6 k.p method under applied hydrostatic pressure. Our calculations demonstrated that the hole-hole-electron (CHHS) and electron-electron-hole (CCCH) Auger coefficients had the largest contribution to the total Auger coefficient (76% and 20%, respectively). It was found that a change in pressure up to 10 GPa increases the carrier density up to 0.75×1019cm−3 and 0.56×1019cm−3 for the holes and electrons, respectively, and the effective band gap. Based on the result, it could decrease the exaction binding energy, rise the electric field rate up to 0.77MV/cm, and decrease the Auger coefficient and Auger current up to 2.1×10− 31 cm6s− 1and 75A/cm2 in the multiple-quantum well regions, respectively. Our studies provided more detailed insight into the origin of the Auger current drop under hydrostatic pressure in InGaN-based LEDs.