Effect of impurity strength and impurity domain on excitation of doped quantum dot induced by discontinuously reversing pulsed field

Abstract

Articles you may be interested inCoulomb potential effects on spectra of graphene magnetic quantum dots J. Appl. Phys. 113, 224303 (2013); 10.1063/1.4809553 Excitations in doped quantum dot induced by accelerating impurity center J. Appl. Phys. 110, 054314 (2011); 10.1063/1.3624664 Impurity-modified Fano effect in a double quantum dot Aharonov-Bohm interferometer Intense field effects on hydrogen impurities in quantum dotsWe explore the excitation profile of a repulsive impurity doped quantum dot. The quantum dot is subject to a discontinuously reversing static electric field. The dopant impurity potential chosen assumes Gaussian form. The investigation reveals how impurity strength and impurity domain can influence the excitation rate in conjunction with the number of pulses offered by the external field. Time-dependent Hellmann-Feynman theorem has been invoked to understand the extent of external field-to-dot energy transfer.

Excitations in doped quantum dot induced by accelerating impurity center

“…Recently, we have made some investigations on the excitation profiles of the doped quantum dots owing to time-dependent modulation of impurity potential. [25][26][27][28] In this paper we have attempted to investigate the excitations in the doped quantum dot that is induced by a time-dependent propagation of the dopant coordinate. The dopant, during its motion, experiences several jolts that change its velocity randomly.…”