Effect of Laser Rapid Sintering on the Electrical Properties of Sr- and Mg-doped LaGaO3

Abstract

Materials La 0.9 Sr 0.1 Ga 0.8 Mg 0.2 O 3−δ and La 0.8 Sr 0.2 Ga 0.83 Mg 0.17-x Co x O 3−δ with x=0, 0.05, 0.085, 0.10 and 0.15 are synthesized by laser rapid sintering (LRS). It is found that the total conductivities of La 0.8 Sr 0.2 Ga 0.83 Mg 0.17-x Co x O 3−δ by LRS are obviously improved by Co doping, showing a general increase with the content Co except that for x=0.15. The conductivities of the La 0.9 Sr 0.1 Ga 0.8 Mg 0.2 O 3−δ and La 0.8 Sr 0.2 Ga 0.83 Mg 0.085 Co 0.085 O 3−δ samples synthesized by LRS are superior to those of both samples for the same compositions by solid state reaction (SSR) at any temperatures. The conductivities of La 0.9 Sr 0.1 Ga 0.8 Mg 0.2 O 3−δ and La 0.8 Sr 0.2 Ga 0.83 Mg 0.085 Co 0.085 O 3−δ samples synthesized by LRS are about twice and thrice as much as those of the samples for the same compositions synthesized by SSR, respectively. The improved conductivities of La 0.9 Sr 0.1 Ga 0.8 Mg 0.2 O 3−δ and La 0.8 Sr 0.2 Ga 0.83 Mg 0.085 Co 0.085 O 3−δ prepared by laser rapid sintering with respect to that by solid state reactions for the same composition is attributed to the unique microstructures of the samples generated during laser rapid sintering.