Effect of linewidth enhancement factor of laser diode and fiber dispersion management on high-speed optical fiber links performance and use in WDM systems

Mahmoud, Alaa; Fouad, Nada; Ahmed, Moustafa; Mohamed, Tarek A.

doi:10.1007/s11082-022-04379-z

Cited by 5 publications

(2 citation statements)

References 52 publications

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“…Here we observe better agreement between the numerical and empirical results for all frequencies in the operation bandwidth, corresponding to a relative error of less than 4%. These relative errors are acceptable concerning the practical significance of LWEF values [38,39].…”

Section: Discussion and Comparison With Empirical Resultsmentioning

confidence: 73%

Design of Quantum-dot Semiconductor Optical Amplifiers With Near-zero Linewidth Enhancement Factor

Aşırım,

Jirauschek

2024

Preprint

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The linewidth enhancement factor (LWEF) of a semiconductor optical amplifier (SOA) quantifies refractive index fluctuations in the gain medium, which induce phase distortion in the amplified optical signal. Optoelectronic systems employing SOAs with high LWEFs often exhibit poor device stability and beam coherence. Thus, designing SOAs with low LWEF is imperative. Recently, Quantum-Dot (QD) SOAs have emerged as a solution for LWEF suppression due to quantum-confinement effects enabling tunability of the QD carrier density and emission frequency. In this study, we aim to design a composite active region comprised of a host medium and the embodied QDs, to explore the corresponding LWEF variation and propose the ultimate design strategy to achieve near-zero LWEF in QD SOAs for enhancing device stability and beam coherence. Our approach entails modeling the refractive index of the composite active region using effective medium approximation via Maxwell-Garnett mixing formulation. We then extensively tune key SOA parameters, including QD carrier density, QD emission frequency, and the collision-time constant of the carriers to uncover the optimal configuration for minimizing the LWEF. Based on empirical values, we have developed and validated a simple yet effective algorithm that precisely simulates LWEF behavior in response to changes in key QD SOA parameters. This approach offers a straightforward model for estimating LWEF variation, and its corresponding minimization in QD SOAs without requiring complex experimental measurement techniques.

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Section: Discussion and Comparison With Empirical Resultsmentioning

confidence: 73%

Design of Quantum-dot Semiconductor Optical Amplifiers With Near-zero Linewidth Enhancement Factor

Aşırım,

Jirauschek

2024

Preprint

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“…The linewidth enhancement factor (LEF) is an important high-speed parameter in controlling frequency chirp effects. It is primarily influenced by the quantum well differential gain and the change of refractive index [11], [12]. Enhancing the differential gain can potentially decrease the linewidth enhancement factor and thus the chirp parameter.…”

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confidence: 99%

Active Region Design With Different Crystal Orientations for High-Speed DFB Laser

Li,

Gao,

Zhao

2024

IEEE Photonics J.

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High-speed directly modulated distributed feedback (DFB) laser is crucial for high-speed optical communication systems. The modulation bandwidth and frequency chirp of such devices are primarily affected by the differential gain and linewidth enhancement factor (LEF) of the quantum wells (QWs) in the active region. In this work, the optical gain properties of long wavelength AlGaInAs-InP strained quantum wells (QWs) with different crystal orientations are numerically investigated using the multi-bands k.p theory, which considers both valence-band anisotropic and nonparabolicity. Compared to the QW laser grown on a conventional (001) substrate, a higher differential gain, and smaller LEF are observed for the laser grown on the (110) substrate with the ( 110) plane as the mirror facet. This is primarily due to the reduced effective mass of the valence band. The dynamic characteristics of (001)-and (110)-oriented DFB laser is theoretically studied using the one-dimensional traveling wave model (1D TWM) at 25 • C and 95 • C. The simulation results show that the lower chirp and wider modulation bandwidth can be achieved for the QW laser grown on (110) substrate.

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Desıgn of quantum-dot semiconductor optical amplifiers wıth near-zero linewidth enhancement factor

Aşırım,

Jirauschek

2024

Opt Quant Electron

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The linewidth enhancement factor (LWEF) of a semiconductor optical amplifier (SOA) quantifies refractive index fluctuations in the gain medium, which induce phase distortion in the amplified optical signal. Optoelectronic systems employing SOAs with high LWEFs often exhibit poor device stability and beam coherence. Thus, designing SOAs with low LWEF is imperative. Recently, Quantum-Dot (QD) SOAs have emerged as a solution for LWEF suppression due to quantum-confinement effects enabling tunability of the QD carrier density and emission frequency. In this study, we aim to design a composite active region comprised of a host medium and the embodied QDs, to explore the corresponding LWEF variation and propose the ultimate design strategy to achieve near-zero LWEF in QD SOAs for enhancing device stability and beam coherence. Our approach entails modeling the refractive index of the composite active region using effective medium approximation via Maxwell–Garnett mixing formulation. We then extensively tune key SOA parameters, including QD carrier density, QD emission frequency, and the collision-time constant of the carriers to uncover the optimal configuration for minimizing the LWEF. Based on empirical values, we have developed and validated a simple yet effective algorithm that precisely simulates LWEF behavior in response to changes in key QD SOA parameters. This approach offers a straightforward model for estimating LWEF variation, and its corresponding minimization in QD SOAs without requiring complex experimental measurement techniques.

show abstract

Effect of linewidth enhancement factor of laser diode and fiber dispersion management on high-speed optical fiber links performance and use in WDM systems

Cited by 5 publications

References 52 publications

Design of Quantum-dot Semiconductor Optical Amplifiers With Near-zero Linewidth Enhancement Factor

Design of Quantum-dot Semiconductor Optical Amplifiers With Near-zero Linewidth Enhancement Factor

Active Region Design With Different Crystal Orientations for High-Speed DFB Laser

Desıgn of quantum-dot semiconductor optical amplifiers wıth near-zero linewidth enhancement factor

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