Effect of Mn2+ Doping on Structural, Morphological and Optical Properties of ZnS Nanoparticles by Chemical Co-Precipitation Method

Abstract

Zinc Sulphide (ZnS) nanoparticles doped with different concentrations of Mn 2+ (0%, 2%, 4%, 6%, 8%, 10%) have been synthesized by chemical co-precipitation method using polyvinyl alcohol (PVA) as a capping agent to control the particle growth. The structural characterizations of as synthesized nanoparticles are determined by X-ray diffraction (XRD) which showed cubic zinc blende structures with average crystallite sizes of the range 2.3 nm-2.1 nm. There is no phase transformation due to Mn 2+ doping and this characteristic has been observed in all the synthesized powder. Scanning electron microscopy (SEM) and energy dispersive Xray (EDX) analysis show the morphology and elemental analysis of as synthesized nanoparticles.TEM images confirms the spherical shape of the nanoparticles. HRTEM and SAED images show the crystalline nature and confirm the cubic nature of ZnS nanoparticles. Absorption study has been carried out by using UV-Vis spectrophotometer to determine the band gap of ZnS:Mn nanoparticles and they showed a blue shift with respect to the bulk. The effect of Mn 2+ substitution on the photoluminescence properties of doped samples is also studied and doped ZnS:Mn showed enhanced luminescence property compared with that of the undoped ZnS nanoparticles. Radius of the synthesized nanoparticles has been evaluated from the absorption spectrum by using the Effective Mass Approximation (EMA) formula. Fourier Transform Infrared Spectra (FTIR) is recorded in an FTIR spectrometer to verify the presence and effect of capping agent.

Effect of Thickness on Structural and Optical properties of ZnS:Mn films Prepared by RF magnetron Sputtering Method

“…The linear part indicates that the transition mode in this film is of direct nature. The result show that the film thickness is very important in the optical band gap assignment, it is observed that the optical energy band gap is decrease from (3.70 eV to 3.20 eV) with increasing of film thickness from (404 to 900) nm as shown in figure (6) and table (2) , these result are in agreement with [13].…”

“…There are many deposition techniques used to prepare ZnS thin film, such as spray pyrolysis, sol -gel deposition, chemical bath deposition, pulsed laser deposition, thermal evaporation, and RF magnetron sputtering [5]. Among these synthesis techniques , RF magnetron sputtering method has some advantages such as high film growth rate, easier controllability of the deposition parameters and compatibility with sputtering deposition of absorber and window layer [6].In this paper, the influence of thickness on structural and optical properties of ZnS: Mn prepared by RF magnetron sputtering technique has been studied. 2 -Experimental: Raido frequncey (RF) magnetron sputtering method used to synthesis ZnS thin film on glass substrate , were mixed 20 g of ZnS with 0.4mg of Mn (99.99% purity) placed in a mold for compressed by the hydraulic piston with pressure (8-10) tons to prepare target of 5cm diameter and thickness 3mm then sintered for 2 hrs at temperature 200 o C. The target mounted in the magnetron gun , then close the door of deposition chamber and evacuated to final pressure (7.9× 10 -5 torr) by Dry scroll pump and then , the pressure upto (2.3× 10 -2 torr) by introduction high purity Ar gas (99.99% purity) into deposition chamber [5].…”

Paramagnetic nature of Mn doped ZnS nano particles in opto electronic device application

“…The average diameter of these particles is 19.3 and 7.1 nm. The average diameter of ZnS is found to be larger than that obtained from XRD because XRD gives crystallite size whereas TEM gives full size of the particles including noncrystalline part also [17].…”

The Morphological Properties of Zns Nanoparticles Deposited on Glass Substrates as a Function of Aluminum Content

“…Furthermore, ZnS structures frequently crystallize in space groups (F43m) and (P63) in the cubic zincblende (ZB) phase at low temperatures, and (P63) in the hexagonal zincblende (ZB) phase at high temperatures [11]. Several research groups have attempted to dope ZnS films with elements such as In, Al, Fe, Co, Pb, Cd, Cu, Mn, Cr, Ni, Eu, Sm, and Cl throughout the growth process [14][15][16][17][18][19][20]. However, there have been infrequent studies on aluminum doped with ZnS films and placed on substrates [21,22].…”